Amorphous oxide and thin film transistor
The present invention relates to an amorphous oxide and a thin film transistor using the
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
amorphous oxide. In particular, the present invention provides an amorphous oxide having …
Active matrix display device
M Sakakura, T Noda, H Kuwabara… - US Patent …, 2013 - Google Patents
(57) ABSTRACT A manufacturing method of an active matrix light emitting device in which
the active matrix light emitting device can be manufactured in a shorter time with high yield …
the active matrix light emitting device can be manufactured in a shorter time with high yield …
Electronic device, semiconductor device and manufacturing method thereof
S Maekawa, H Kuwabara - US Patent App. 12/346,250, 2009 - Google Patents
Assignee: SEMICONDUCTOR ENERGY The present invention provides a manufacturing
process LABORATORY CO., LTD., using a droplet-discharging method that is suitable for …
process LABORATORY CO., LTD., using a droplet-discharging method that is suitable for …
Semiconductor device and method for manufacturing the same, and electric device
H Kuwabara, H Yamamoto - US Patent App. 12/268,558, 2009 - Google Patents
0001 1. Field of the Invention 0002 The present invention relates to a semiconductor device
having a circuit including a thin film transistor (here inafter, referred to as a TFT) and to a …
having a circuit including a thin film transistor (here inafter, referred to as a TFT) and to a …
Semiconductor device and manufacturing method thereof
K Akimoto, T Honda, N Sone - US Patent 7,732,819, 2010 - Google Patents
An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …
complicated and by which cost can be suppressed, by forming a thin film transistor using an …
Thin film transistor including selectively crystallized channel layer and method of manufacturing the thin film transistor
Provided are a thin film transistor (TFT) including a selec tively crystallized channel layer,
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …
and a method of manufac turing the TFT. The TFT includes a gate, the channel layer, a …
Semiconductor device and manufacturing method thereof
K Akimoto, T Honda, N Sone - US Patent 7,674,650, 2010 - Google Patents
An object is to provide a semiconductor device of which a manufacturing process is not
complicated and by which cost can be suppressed, by forming a thin film transistor using an …
complicated and by which cost can be suppressed, by forming a thin film transistor using an …
Field effect transistor manufacturing method
Provided is a novel method for manufacturing a field effect transistor. Prior to forming an
amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate …
amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate …
Field effect transistor
(57) ABSTRACT A novel field-effect transistor is provided which employs an amorphous
oxide. In an embodiment of the present invention, the transistor comprises an amorphous …
oxide. In an embodiment of the present invention, the transistor comprises an amorphous …