Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Progress in state-of-the-art technologies of Ga2O3 devices
C Wang, J Zhang, S Xu, C Zhang, Q Feng… - Journal of Physics D …, 2021 - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3), an emerging ultra-wide-bandgap semiconductor, has the
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
desirable properties of a large bandgap of 4.6–4.9 eV, an estimated critical breakdown field …
[HTML][HTML] β-Gallium oxide power electronics
Gallium Oxide has undergone rapid technological maturation over the last decade, pushing
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
it to the forefront of ultra-wide band gap semiconductor technologies. Maximizing the …
2.41 kV Vertical P-Nio/n-Ga2O3 Heterojunction Diodes With a Record Baliga's Figure-of-Merit of 5.18 GW/cm2
Y Wang, H Gong, Y Lv, X Fu, S Dun… - … on Power Electronics, 2021 - ieeexplore.ieee.org
In this letter, high-performance p-NiO/β-Ga 2 O 3 heterojunction diodes (HJDs) with
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
composite terminal structures, a p-NiO junction termination extension (JTE), and a small …
Field-Plated Lateral Ga2O3 MOSFETs With Polymer Passivation and 8.03 kV Breakdown Voltage
This letter reports the polymer passivation of field plated lateral β-Ga 2 O 3 MOSFETs with
significant improvement in the breakdown voltages as compared to non-passivated devices …
significant improvement in the breakdown voltages as compared to non-passivated devices …
Demonstration of the p-NiOx/n-Ga2O3 Heterojunction Gate FETs and Diodes With BV2/Ron,sp Figures of Merit of 0.39 GW/cm2 and 1.38 GW/cm2
C Wang, H Gong, W Lei, Y Cai, Z Hu… - IEEE Electron …, 2021 - ieeexplore.ieee.org
We report on achieving high-performance β-Ga 2 O 3 power devices through the
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
incorporation of the p-type NiO x. β-Ga 2 O 3 pn heterojunction (HJ) diodes, as well as the …
[HTML][HTML] Toward emerging gallium oxide semiconductors: A roadmap
Owing to the advantages of ultra-wide bandgap and rich material systems, gallium oxide (Ga
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
2 O 3) has emerged as a highly viable semiconductor material for new researches. This …
Recent advances in NiO/Ga2O3 heterojunctions for power electronics
X Lu, Y Deng, Y Pei, Z Chen… - Journal of Semiconductors, 2023 - iopscience.iop.org
Beta gallium oxide (β-Ga 2 O 3) has attracted significant attention for applications in power
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
electronics due to its ultra-wide bandgap of~ 4.8 eV and the large critical electric field of 8 …
Vertical β-Ga₂O₃ Power Transistors: A Review
MH Wong, M Higashiwaki - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
With projected performance advantages over silicon and incumbent wide-bandgap
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
compound semiconductors, gallium oxide (Ga 2 O 3) has garnered worldwide attention as …
4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm− 2
A Bhattacharyya, S Sharma, F Alema… - Applied Physics …, 2022 - iopscience.iop.org
Abstract β-Ga 2 O 3 metal–semiconductor field-effect transistors are realized with superior
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …
reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x …