Asymmetric Schottky contacts induced via localized ultrafast laser irradiation for ultrasensitive, self-powered, 2D photodetectors
Self-powered photodetectors hold great promise for addressing power-related challenges in
the “Internet of Things (IoT)” era. However, the self-powered performances of a metal …
the “Internet of Things (IoT)” era. However, the self-powered performances of a metal …
Small Feature‐Size Transistors Based on Low‐Dimensional Materials: From Structure Design to Nanofabrication Techniques
X Fu, Z Liu, H Wang, D Xie, Y Sun - Advanced Science, 2024 - Wiley Online Library
For several decades after Moore's Law is proposed, there is a continuous effort to reduce the
feature‐size of transistors. However, as the size of transistors continues to decrease …
feature‐size of transistors. However, as the size of transistors continues to decrease …
Local modulation of Au/MoS 2 Schottky barriers using a top ZnO nanowire gate for high-performance photodetection
Schottky junctions are commonly used for fabricating heterojunction-based 2D transition
metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection …
metal dichalcogenide (TMD) photodetectors, characteristically offering a wide detection …
Transistors Based on Novel 2-D Monolayer Semiconductors BiOSe, InSe, and MoSiN for Enhanced Logic Density Scaling
Making ultra-short gate-length transistors significantly contributes to scaling the contacted
gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for …
gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for …
Transistors based on Novel 2-D Monolayer Semiconductors Bi2O2Se, InSe, and MoSi2N4 for Enhanced Logic Density Scaling
Making ultra-short gate-length transistors significantly contributes to scaling the contacted
gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for …
gate pitch. This, in turn, plays a vital role in achieving smaller standard logic cells for …
Fabrication of sub-20 nm MoS2 horizontal nanowire on silicon substrates by inclusion of precursors into polystyrene-b-polyethylene oxide nanopatterns: Detailed …
Herein, we demonstrate the fabrication of sub-20 nm MoS2 horizontal nanowire arrays on
silicon substrates using a self-assembled block copolymer assisted in situ inclusion …
silicon substrates using a self-assembled block copolymer assisted in situ inclusion …
In Situ Induced Asymmetric Schottky Contacts Via Localized Ultrafast Laser Irradiation for Ultrasensitive, Self-Powered, 2d Photodetectors
J Peng, G Zou, J Huo, Y Xiao, T Sun, Z Li… - Self-Powered, 2d … - papers.ssrn.com
Self-powered photodetectors hold great promise for addressing power-related challenges in
the “Internet of Things (IoT)” era. However, the self-powered performances of a metal …
the “Internet of Things (IoT)” era. However, the self-powered performances of a metal …