MD simulation study on defect evolution and doping efficiency of p-type doping of 3C-SiC by Al ion implantation with subsequent annealing
We use molecular dynamics (MD) simulation with numerical characterisation and statistical
analysis to study the mechanisms of damage evolution and p-type doping efficiency by …
analysis to study the mechanisms of damage evolution and p-type doping efficiency by …
Annealing recovery of nanoscale silicon surface damage caused by Ga focused ion beam
Abstracts In this paper, molecular dynamics method with the Tersoff–ZBL combined
interatomic potential was adopted to study the dynamics of focused ion beam (FIB) milling …
interatomic potential was adopted to study the dynamics of focused ion beam (FIB) milling …
Nanoscale manipulation of Ge nanowires by ion irradiation
L Romano, NG Rudawski, MR Holzworth… - Journal of Applied …, 2009 - pubs.aip.org
Nanowires have generated considerable interest as nanoscale interconnects and as active
components of both electronic and electromechanical devices. However, in many cases …
components of both electronic and electromechanical devices. However, in many cases …
Laser processing of silicon for photovoltaics and structural phase transformation
High-power nanosecond-pulse-width laser processing is attracting increasing attention for
the manufacturing of low-cost high-performance silicon photovoltaic and microelectronic …
the manufacturing of low-cost high-performance silicon photovoltaic and microelectronic …
Efficient TCAD model for the evolution of interstitial clusters,{311} defects, and dislocation loops in silicon
N Zographos, C Zechner, I Avci - MRS Online Proceedings Library …, 2007 - cambridge.org
The simulation of deep-submicron silicon-device manufacturing processes relies on
predictive models for extended defect clusters. For submicroscopic interstitial clusters and …
predictive models for extended defect clusters. For submicroscopic interstitial clusters and …
[HTML][HTML] Boron Doping in Next-Generation Materials for Semiconductor Device
LCT Cao, L Hakim, SH Hsu - Characteristics and Applications of …, 2022 - intechopen.com
The article surveys the most recent achievements starting with the boron doping mechanism,
mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon …
mainly focused on doping in semiconductor materials such as Si, Ge, graphene, carbon …
Evidences of an intermediate rodlike defect during the transformation of {113} defects into dislocation loops
A detailed study of the transformation of the {113} defects into dislocation loops has been
carried out in Ge preamorphized silicon ( 30 keV, 1× 10 15 Ge+∕ cm 2) and annealed …
carried out in Ge preamorphized silicon ( 30 keV, 1× 10 15 Ge+∕ cm 2) and annealed …
Evolution of end-of-range damage and transient enhanced diffusion of indium in silicon
T Noda - Journal of applied physics, 2002 - pubs.aip.org
Transient enhanced diffusion TED of dopants is anomalous diffusivity enhancement induced
by dopantdefect interaction. Predictive simulations of TED are necessary for achievement of …
by dopantdefect interaction. Predictive simulations of TED are necessary for achievement of …
Planar interstitial aggregates in Si
Self-interstitials in silicon aggregate to form rod-like defects aligned along [110] directions
and inhabiting either {111} or {113} crystallographic planes. These systems are known to be …
and inhabiting either {111} or {113} crystallographic planes. These systems are known to be …
Atomic structures of boron-induced protrusion features on Si (100) surfaces
Z Liu, Z Zhang, X Zhu - Physical Review B—Condensed Matter and Materials …, 2008 - APS
It is known that ultrahigh doping can be realized for boron on Si (100) substrates, while
boron-induced features on a heavily boron-doped Si (100) surface cannot form any periodic …
boron-induced features on a heavily boron-doped Si (100) surface cannot form any periodic …