Development of AlGaN/GaN MOSHEMT biosensors: State-of-the-art review and future directions
This article provides a comprehensive overview is of AlGaN/GaN Metal Oxide
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
Semiconductor High Electron Mobility Transistor (MOSHEMT) based state of the art sensors …
AlGaN/GaN HEMT pH sensor simulation model and its maximum transconductance considerations for improved sensitivity
In this work, AlGaN/GaN high electron mobility transistor (HEMT) pH sensing simulation
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
model is presented along with the sensitivity analysis to different pH values of an electrolyte …
Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT-based hydrogen gas detector with low detection limit
A Varghese, A Eblabla, K Elgaid - IEEE Sensors Journal, 2021 - ieeexplore.ieee.org
Presented through this work is a steady state analytical model of the GaN HEMT based gas
detector. GaN with high chemical and thermal stability provides promises for detectors in …
detector. GaN with high chemical and thermal stability provides promises for detectors in …
High Sensitivity of Extended-Gate Field-Effect Transistors Based on 1-D ZnO: Ag Nanomaterials through a Cheap Photochemical Synthesis as pH Sensors at Room …
We investigated an extended-gate field-effect transistor (EG-FET) as a pH sensor in this
work. It was based on low-temperature hydrothermally grown one-dimensional (1-D) zinc …
work. It was based on low-temperature hydrothermally grown one-dimensional (1-D) zinc …
Performance Improvement of a ZnGa2O4 Extended-Gate Field-Effect Transistor pH Sensor
CH Chen, SB Liu, SP Chang - ACS omega, 2024 - ACS Publications
ZnGa2O4 sensing films were prepared using an RF magnetron sputtering system and
connected to a commercial metal oxide semiconductor field-effect transistor (MOSFET) as …
connected to a commercial metal oxide semiconductor field-effect transistor (MOSFET) as …
A Review of GaN Channel-Based MOSHEMTs for Next-Generation Medium/Low-Voltage Rating and High-Speed RF Power Applications
G Deshpande, S Bhattacharya, J Ajayan… - Journal of Electronic …, 2024 - Springer
This comprehensive review delves into the intricate realm of GaN-based metal–oxide–
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
semiconductor (MOS) high-electron-mobility transistors (HEMTs), providing an exhaustive …
Investigation of AlGaN/GaN HEMT for pH sensing applications and sensitivity optimization
AM Bhat, C Periasamy - Superlattices and Microstructures, 2021 - Elsevier
Abstract In this work, AlGaN/GaN HEMT pH sensitive response has been presented through
extensive simulations demonstrating the effect of pH variation on channel conductance …
extensive simulations demonstrating the effect of pH variation on channel conductance …
Sensitivity analysis of Al0. 3Ga0. 7N/GaN dielectric modulated MOSHEMT biosensor
Emerging and newly proposed devices integrate various materials at different scales (from
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
nano to submicron), which reveals sensor response. Prefab simulation is in great demand to …
Impact of InGaN notch on sensitivity in dielectric modulated dual channel GaN MOSHEMT for label-free biosensing
The effect of InGaN notch on sensitivity and Dielectric Modulated (DM) Double
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Heterojunction (DH) dual channel AlGaN/GaN/InGaN/GaN MOSHEMT (Metal Oxide …
Optimizing Bio-sensor Design with Support Vector Regression Technique for AlGaN/GaN MOSHEMT
This letter introduces a novel approach using support vector regression (SVR) for sensitivity
modeling of gallium nitride (GaN) metal oxide semiconductor (MOS)–high electron mobility …
modeling of gallium nitride (GaN) metal oxide semiconductor (MOS)–high electron mobility …