In some examples, an electronic device comprising an input ferroelectric (FE) capacitor, an
output FE capacitor, and a channel positioned beneath the input FE capacitor and …

According to an aspect of the present disclosure, an MRAM assembly comprises a substrate,
a plurality of MRAM cells, a plurality of bit lines, each bit line magnetically coupled to one of …

Abstract A Magnetoresistive Random Access Memory (MRAM) assembly includes a first
ferromagnetic shielding component, a second ferromagnetic shielding component, a …

A spin-orbit torque magnetoresistive random-access memory device formed by forming an
array of transistors, where a column of the array includes a source line contacting the source …

A variable resistance memory device includes a first conductive line, a bipolar selection
device on the first conductive line and electrically connected to the first conductive line, a …

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a
spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin …

The bottom-pinned spin-orbit torque (SOT) MRAM devices are fabricated to form high quality
interfaces between layers including the spin-orbit torque (SOT) layer and the free layer of the …

Abstract A cross-point SOT-MRAM cell includes: a first SHE write line; a second SHE write
line non-colinear to the first SHE write line; a cross-point free layer comprising a first free …

Embodiments disclosed herein include a semiconductor structure. The semiconductor
structure may include a spin transfer torque (STT) magnetoresistive random access memory …

A spin-orbit torque magnetoresistive random-access memory device formed by fabricating a
spin-Hall-effect (SHE) layer above and in electrical contact with a transistor, forming a spin …