Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy
Transmission electron microscopy (TEM) offers an ample range of complementary
techniques which are able to provide essential information about the physical, chemical and …
techniques which are able to provide essential information about the physical, chemical and …
Hydrogenated anatase TiO 2 single crystals: Defects formation and structural changes as microscopic origin of co-catalyst free photocatalytic H 2 evolution activity
Herein we systematically investigate the influence of hydrogenation time and temperature
on defects formation, structural changes, and co-catalyst free photocatalytic activity for …
on defects formation, structural changes, and co-catalyst free photocatalytic activity for …
Spontaneous formation of three-dimensionally ordered Bi-rich nanostructures within GaAs1− xBix/GaAs quantum wells
In this work, we report on the spontaneous formation of ordered arrays of nanometer-sized
Bi-rich structures due to lateral composition modulations in Ga (As, Bi)/GaAs quantum wells …
Bi-rich structures due to lateral composition modulations in Ga (As, Bi)/GaAs quantum wells …
Spontaneous formation of nanostructures by surface spinodal decomposition in GaAs1− xBix epilayers
We report on the spontaneous formation of lateral composition modulations (LCMs) in Ga
(As, Bi) epilayers grown by low-temperature (< 300 C) molecular beam epitaxy (MBE) on …
(As, Bi) epilayers grown by low-temperature (< 300 C) molecular beam epitaxy (MBE) on …
High-temperature intrinsic ferromagnetism in heavily Fe-doped GaAs layers
AV Kudrin, VP Lesnikov, YA Danilov… - Semiconductor …, 2020 - iopscience.iop.org
The layers of a high-temperature novel GaAs: Fe diluted magnetic semiconductor (DMS)
with an average Fe content up to 20 at.% were grown on (001) i-GaAs substrates using a …
with an average Fe content up to 20 at.% were grown on (001) i-GaAs substrates using a …
Optical anisotropy of CuPt-ordered GaAsBi alloys
V Karpus, B Čechavičius, S Tumėnas… - Journal of Physics D …, 2021 - iopscience.iop.org
The molecular beam epitaxy-grown epitaxial, partially relaxed, GaAs $ _ {1-x} $ Bi x bismide
layers of ${\sim} 1\\mu\textrm {m} $ thickness and x≈ 0.04 composition are examined. The …
layers of ${\sim} 1\\mu\textrm {m} $ thickness and x≈ 0.04 composition are examined. The …
Reflectance anisotropy spectroscopy of strain-engineered GaAsBi alloys
In this paper, we present results obtained by an optical technique, namely, reflectance
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
anisotropy spectroscopy (RAS), applied to a series of GaAs 1− x Bi x samples grown by …
MBE growth optimization for GaAs1− xBix and dependence of photoluminescence on growth temperature
V Bahrami-Yekta, T Tiedje… - Semiconductor Science …, 2015 - iopscience.iop.org
The effect of growth conditions on the electronic properties of GaAs 1− x Bi x grown on GaAs
by molecular beam epitaxy has been investigated by means of temperature dependent …
by molecular beam epitaxy has been investigated by means of temperature dependent …
Growth and characterisation of Ga (NAsBi) alloy by metal–organic vapour phase epitaxy
This paper summarises results of the epitaxial growth of Ga (NAsBi) by metal–organic
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …
vapour phase epitaxy (MOVPE) and the subsequent optical and structural characterisations …