Thermal emission of current carriers from defects in semiconductors has been used as a
characterization technique for over 50 years. One of the most significant early publications …

The term junction spectroscopy embraces a wide range of techniques used to explore the
properties of semiconductor materials and semiconductor devices. In this tutorial review, we …

Electron and hole traps in the carbon doping of n-type GaN films grown by metal–organic
chemical vapor deposition were investigated by deep level and minority carrier transient …

Acceptor dopants in 4H-SiC exhibit energy levels that are located deeper in the band gap
than the thermal energy at room temperature (RT), resulting in incomplete ionization at RT …

We report on influence of neutron radiation on majority and minority carrier traps in n-type 4
H-SiC. Together with the increase of the well-known carbon vacancy (VC) majority carrier …

A technique for measuring the properties of deep states which trap minority carriers in the
depletion region of a Schottky barrier is described. By combining minority-carrier capture …

Gallium phosphide (GaP) photoelectrodes have received tremendous attention owing to
their applications in photocatalysis and photoelectrocatalytic reduction of CO2. Surface …

We have studied electron and hole traps in Si-doped n-GaN grown by metal organic
chemical vapor deposition on n+-GaN, sapphire, SiC and Si substrates. DLTS using bias …

We propose a novel structure for the Esaki tunnel diode that utilizes a quantum well in order
to increase the peak-to-valley current ratio. The quantum well is formed by sandwiching a …

In this review, we provide an overview of the most common majority and minority charge
carrier traps in n-type 4H-SiC materials. We focus on the results obtained by different …