GaN integration technology, an ideal candidate for high-temperature applications: A review
In many leading industrial applications such as aerospace, military, automotive, and deep-
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
well drilling, extreme temperature environment is the fundamental hindrance to the use of …
Electronics and packaging intended for emerging harsh environment applications: A review
Several industrial applications require specific electronic systems installed in harsh
environments to perform measurements, monitoring, and control tasks such as in space …
environments to perform measurements, monitoring, and control tasks such as in space …
[HTML][HTML] Circuit techniques in GaN technology for high-temperature environments
As a wide bandgap semiconductor, Gallium Nitride (GaN) device proves itself as a suitable
candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology …
candidate to implement high temperature (HT) integrated circuits. GaN500 is a technology …
A normalized quantitative method for GaN HEMT turn-on overvoltage modeling and suppressing
X Long, W Liang, Z Jun, G Chen - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Gallium nitride high electron mobility transistor has been seen as a power semiconductor
devices with lots of potential since it has been commercialized. However, the advantages of …
devices with lots of potential since it has been commercialized. However, the advantages of …
A GaN-based wireless monitoring system for high-temperature applications
A fully-integrated data transmission system based on gallium nitride (GaN) high-electron-
mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) …
mobility transistor (HEMT) devices is proposed. This system targets high-temperature (HT) …
Towards GaN500-based high temperature ICs: Characterization and modeling up to 600° C
This paper contributes toward the implementation of Gallium Nitride (GaN)-based integrated
circuits (ICs) intended for high-temperature (HT) applications. We present the …
circuits (ICs) intended for high-temperature (HT) applications. We present the …
High-temperature modeling of the IV characteristics of GaN150 HEMT using machine learning techniques
We propose in this paper a high-temperature non-linear modeling for the IV characteristics
of GaN150 HEMT. Three different data-driven models were developed for a temperature …
of GaN150 HEMT. Three different data-driven models were developed for a temperature …
Investigation of RF performance of Ku-band GaN HEMT device and an in-depth analysis of short channel effects
J Raychaudhuri, J Mukherjee, S Kumar… - Physica …, 2024 - iopscience.iop.org
In this paper, we have characterized an AlGaN/GaN High Electron Mobility Transistor
(HEMT) with a short gate length (L g≈ 0.15 μm). We have studied the effect of short gate …
(HEMT) with a short gate length (L g≈ 0.15 μm). We have studied the effect of short gate …
From 3D-IC to 3D-HI for Environmentally Durable Rugged Electronics (EnDuRE)
JM Kim, MS Kim, MM Hussain - IEEE Electron Devices …, 2024 - ieeexplore.ieee.org
The pursuit of higher packing density has propelled the shift towards three-dimensional (3D)
integrated circuits (3D-ICs), promising heightened performance, accelerated data speeds …
integrated circuits (3D-ICs), promising heightened performance, accelerated data speeds …
Fully Integrated Digital GaN-Based LSK Demodulator for High-Temperature Applications
We present the first Gallium Nitride (GaN)-based demodulator system dedicated to
demodulating Load-Shift Keying (LSK) modulated signals that can operate at high …
demodulating Load-Shift Keying (LSK) modulated signals that can operate at high …