GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source
offering a number of design options from bulk to heterostructures and quantum wells. Here …

Group IV photonics is on its way to be integrated with electronic circuits, making information
transfer and processing faster and more energy efficient. Light sources, a critical component …

Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …

We report on Sn-based pin waveguide photodetectors (WGPD) with a pseudomorphic
GeSn/Ge multiple-quantum-well (MQW) active layer on a Ge-buffered Si substrate. A …

Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …

In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …

The development of an efficient group-IV light source that is compatible with the CMOS
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …