Review of Si-based GeSn CVD growth and optoelectronic applications

Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …

Recent progress in GeSn growth and GeSn-based photonic devices

J Zheng, Z Liu, C Xue, C Li, Y Zuo… - Journal of …, 2018 - iopscience.iop.org
The GeSn binary alloy is a new group IV material that exhibits a direct bandgap when the Sn
content exceeds 6%. It shows great potential for laser use in optoelectronic integration …

Optically pumped GeSn microdisk lasers on Si

D Stange, S Wirths, R Geiger, C Schulte-Braucks… - ACS …, 2016 - ACS Publications
The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …

GeSn/SiGeSn heterostructure and multi quantum well lasers

D Stange, N von den Driesch, T Zabel… - ACS …, 2018 - ACS Publications
GeSn and SiGeSn are promising materials for the fabrication of a group IV laser source
offering a number of design options from bulk to heterostructures and quantum wells. Here …

Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells

D Stange, N Von den Driesch, D Rainko, S Roesgaard… - Optica, 2017 - opg.optica.org
Group IV photonics is on its way to be integrated with electronic circuits, making information
transfer and processing faster and more energy efficient. Light sources, a critical component …

Advanced GeSn/SiGeSn group IV heterostructure lasers

N von den Driesch, D Stange, D Rainko… - Advanced …, 2018 - Wiley Online Library
Growth and characterization of advanced group IV semiconductor materials with CMOS‐
compatible applications are demonstrated, both in photonics. The investigated …

Sn-based waveguide pin photodetector with strained GeSn/Ge multiple-quantum-well active layer

YH Huang, GE Chang, H Li, HH Cheng - Optics Letters, 2017 - opg.optica.org
We report on Sn-based pin waveguide photodetectors (WGPD) with a pseudomorphic
GeSn/Ge multiple-quantum-well (MQW) active layer on a Ge-buffered Si substrate. A …

[HTML][HTML] Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications

Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri… - Journal of Applied …, 2016 - pubs.aip.org
Temperature-dependent characteristics of GeSn light-emitting diodes with Sn composition
up to 9.2% have been systematically studied. Such diodes were based on Ge/GeSn/Ge …

[HTML][HTML] All group-IV SiGeSn/GeSn/SiGeSn QW laser on Si operating up to 90 K

J Margetis, Y Zhou, W Dou, PC Grant, B Alharthi… - Applied Physics …, 2018 - pubs.aip.org
In this work, all group-IV band-to-band lasers based on SiGeSn/GeSn/SiGeSn multi-
quantum-well structures were demonstrated. Lasing performance was investigated via two 4 …

Ge0.92Sn0.08/Ge multi-quantum-well LEDs operated at 2-μm-wavelength on a 12-inch Si substrate

S Wu, L Zhang, R Wan, H Zhou, KH Lee, Q Chen… - Photonics …, 2023 - opg.optica.org
The development of an efficient group-IV light source that is compatible with the CMOS
process remains a significant goal in Si-based photonics. Recently, the GeSn alloy has been …