Near-junction thermal managements of electronics
Near-junction thermal management of electronics has received a lot of attention in the past
decades but there are still many challenges in this area. This chapter provides a …
decades but there are still many challenges in this area. This chapter provides a …
Demonstration of a nanosheet FET with high thermal conductivity material as buried oxide: Mitigation of self-heating effect
Self-heating-induced thermal degradation is a severe issue in nonplanar MOS architectures.
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Especially in stacked gate-all-around (GAA) nanosheet FET (NSFET), the self-heating effect …
Optimization of design space for vertically stacked junctionless nanosheet FET for analog/RF applications
This paper investigates the various device dimensions such as gate length (Lg), nanosheet
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
thickness (TNS), and nanosheet width to optimize the design space for vertically stacked …
Fast and expandable ANN-based compact model and parameter extraction for emerging transistors
In this paper, we present a fast and expandable artificial neural network (ANN)-based
compact model and parameter extraction flow to replace the existing complicated compact …
compact model and parameter extraction flow to replace the existing complicated compact …
Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model
The electrothermal performance of a junctionless nanowire [JL-nanowire (NW)] gate-all-
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
around (GAA) transistors under self-heating effect (SHE) is examined for sub-5 nm …
Thermal conductivity model to analyze the thermal implications in nanowire FETs
In this article, a thermal conductivity () model is proposed (ie, dependent on the temperature,
thickness, and doping concentration) for investigating the thermal behavior of silicon-on …
thickness, and doping concentration) for investigating the thermal behavior of silicon-on …
Investigation of self-heating effect in tree-FETs by interbridging stacked nanosheets: a reliability perspective
S Srivastava, M Shashidhara… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This work comprehensively investigates the self-heating effects (SHEs) in Tree-FET at 5nm
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
technological nodes. A comparative analysis of Tree-FET with Nanosheet FET (NSFET) …
Self-heating and corner rounding effects on time dependent dielectric breakdown of stacked multi-nanosheet FETs
JW Lim, C Yoo, K Park, J Jeon - IEEE Access, 2023 - ieeexplore.ieee.org
In this work, by employing the developed kinetic Monte Carlo (kMC)-based time-dependent
dielectric breakdown (TDDB) analysis simulator, the lifetime characteristics change by TDDB …
dielectric breakdown (TDDB) analysis simulator, the lifetime characteristics change by TDDB …
Self-heating mitigation of TreeFETs by interbridges
CJ Tsen, CC Chung, CW Liu - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Adding interbridges (IBs) as additional channels between nanosheets (NSs) can reduce not
only the maximum temperature in local hotspot of device but also the junction temperature …
only the maximum temperature in local hotspot of device but also the junction temperature …
Trench gate nanosheet FET to suppress leakage current from substrate parasitic channel
KS Lee, BD Yang, JY Park - IEEE Transactions on Electron …, 2023 - ieeexplore.ieee.org
Recently, nanosheet FETs (NS FETs) have been introduced as promising candidates for
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …
beyond 3-nm node technology. However, difficulties remain for mass production of the NS …