Au/CrSe stacked layers designed as optical absorbers, tunneling barriers and negative capacitance sources
LHK Alfhaid, AF Qasrawi - Materials Today Communications, 2023 - Elsevier
Herein thin films of CrSe (500 nm) are deposited onto glass and semitransparent gold
nanosheets (100 nm) under a vacuum pressure of 10− 5 mbar. Au nanosheets substrates …
nanosheets (100 nm) under a vacuum pressure of 10− 5 mbar. Au nanosheets substrates …
Physics and modeling of multidomain FeFET with domain wall-induced negative capacitance
N Pandey, YS Chauhan - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
In this article, we present the dynamics and modeling of multidomains in the ferroelectric
FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit …
FET (FeFET). Due to the periodic texture of domains, the electrostatics of the FeFET exhibit …
Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness
A comprehensive subthreshold model of asymmetric gate all around (GAA) junctionless (JL)
FETs with scaled equivalent oxide thickness is developed in the work. The perimeter …
FETs with scaled equivalent oxide thickness is developed in the work. The perimeter …
Synthesis of Au/Si hybrid nanostructures with tuned optical properties via ultra-short laser pulses for in-Situ nanostructures generation (ULPING)
The research was based on nano-structuring of gold coated silicon and forming a layered
Au/Si hybrid nanostructures with tuned opto-electrical properties. We employed Ultra-short …
Au/Si hybrid nanostructures with tuned opto-electrical properties. We employed Ultra-short …
[PDF][PDF] Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with ferroelectric.
H Jung - AIMS Electronics & Electrical Engineering, 2023 - aimspress.com
Analytical model of subthreshold swing in junctionless gate-all-around (GAA) FET with
ferroelectric Page 1 AIMS Electronics and Electrical Engineering, 7(4): 322‒336. DOI …
ferroelectric Page 1 AIMS Electronics and Electrical Engineering, 7(4): 322‒336. DOI …
Computationally Efficient Band Structure-Based Approach for Accurately Determining Electrostatics and Source-to-Drain Tunneling Current in UTB MOSFETs
The ability of Ultra-Thin-Body (UTB) MOS devices to enable channel length scaling can only
be realistically assessed by accurately taking key physical effects such as Quantum …
be realistically assessed by accurately taking key physical effects such as Quantum …
[图书][B] Theory and simulation of novel low-power nanotransistors
RJ Prentki - 2021 - search.proquest.com
Moore's law predicts an exponential growth of the number of transistors on integrated
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …
On the Memory Window Variability in a 3-D Multi-Granular Ferroelectric FET Including Grain Boundaries
N Pandey, A Phogat… - 2022 IEEE International …, 2022 - ieeexplore.ieee.org
This paper analyzes the variability in the memory window of a ferroelectric FET induced by
distinct grain patterns. The Poisson Voronoi algorithm nucleates the random grain texture in …
distinct grain patterns. The Poisson Voronoi algorithm nucleates the random grain texture in …