AlGaN-based light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) spectral
range (210–280 nm) have demonstrated potential applications in physical sterilization …

The rapidly developing III-nitrides materials and devices technologies are driving the
advancements in hybrid heterogeneous structures for multi-material and multifunctional …

The progressive downscaling of silicon‐based microelectronic devices delivers compact
and advanced integrated circuits for fast data processing and computing. Similarly, the …

The thermally oxidized Al x Ga2–x O3 sidewall was introduced to deep ultraviolet micro-light-
emitting diodes (DUV μ-LEDs) to improve optoelectronic performance. Reducing the chip …

Deep-ultraviolet light-emitting diodes (DUV LEDs) are encountering low external quantum
efficiency (EQE) and light output power (LOP) due to the strong optical absorption to DUV …

AlGaN is attractive for fabricating deep ultraviolet (DUV) optoelectronic and electronic
devices of light-emitting diodes (LEDs), photodetectors, high-electron-mobility field-effect …

It is known that light extraction efficiency (LEE) for AlGaN-based deep ultraviolet (DUV) light-
emitting diodes (LEDs) can be enhanced by using an inclined sidewall of mesa. However …

In this study, 236 nm AlGaN-based deep ultraviolet (DUV) micro-LEDs with different sized P-
contact areas are designed and fabricated, and the sidewalls are restored by a wet chemical …

摘要SiC 衬底是制备高性能AlGaN 基深紫外激光器的良好候选衬底. 采用金属有机化学气相沉积
方法在4H-SiC 衬底上生长了深紫外AlGaN/AlN 多量子阱结构(MQWs), 系统研讨了MQWs …

We demonstrate 0.5 to 15m data communications links with AlGaN LEDs of peak emission
wavelengths of 235 nm and 255 nm. The device-3dB modulation bandwidths were up to …