The hydrophobic (surface modified) silica aerogel (MSA) and hydrophilic (hydroxyl-group)
silica aerogel (HSA) were prepared by ambient pressure drying method. The larger specific …

The increasing sensitivity of porous low dielectric constant materials to process damage
constitutes a major roadblock to their implementation in back-end-of-the-line (BEOL) wiring …

This review considers the key advantages of using supercritical carbon dioxide as a solvent
for systems with organosilicon compounds. Organosilicon polymeric materials synthesis as …

In order to remove the organic dyes of textile waste water, the silica aerogel was
successfully prepared by using E-40 as a novel precursor and then dried in ambient …

Plasma ashing and etching integration steps on porous ultra low-k (ULK) have been
investigated and are found to damage the porous dielectric structural and electrical …

Air-gaps are the ultimate low-k material in microelectronics due to air having a low dielectric
constant close to 1.0. The interconnect capacitance can further be reduced by extending the …

We present a high-throughput optofluidic light waveguide system consisting of etched
microchannels in silicon using water as the core and an ultra low refractive index …

The silylation of plasma-damaged p-SiOCH low-k dielectric films was investigated with
trimethychlorosilane (TMCS), hexamethyldisilazane (HMDS) and dimethyldichlorosilane …

We demonstrate an original and powerful concept for elaborating spontaneous, high fidelity
patterns of nanoporosity from nanoscale building blocks using patterned surface chemistry …

Low-k dielectrics with porosity are being introduced to reduce the RC delay of Cu/low-k
interconnect. However, during the O 2 plasma ashing process, the porous low-k dielectrics …