A Decade of Nonpolar and Semipolar III‐Nitrides: A Review of Successes and Challenges
The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …
High-brightness polarized light-emitting diodes
E Matioli, S Brinkley, KM Kelchner, YL Hu… - Light: Science & …, 2012 - nature.com
Light-emitting diodes are becoming the alternative for future general lighting applications,
with huge energy savings compared to conventional light sources owing to their high …
with huge energy savings compared to conventional light sources owing to their high …
InGaN based green laser diodes on semipolar GaN substrate
M Adachi - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
This paper reviews the development of the InGaN-based green laser diodes on semipolar
GaN substrates, especially focusing on $(20\bar {2} 1) $ plane. The reduction of …
GaN substrates, especially focusing on $(20\bar {2} 1) $ plane. The reduction of …
Nonpolar m-plane InGaN multiple quantum well laser diodes with a lasing wavelength of 499.8 nm
K Okamoto, J Kashiwagi, T Tanaka… - Applied Physics Letters, 2009 - pubs.aip.org
We demonstrated nonpolar m-plane InGaN multiple quantum well laser diodes (LDs) under
continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest …
continuous-wave (cw) operation with a lasing wavelength of 499.8 nm, which is the longest …
Growth of semipolar (1122) GaN layer by controlling anisotropic growth rates in r-plane patterned sapphire substrate
N Okada, A Kurisu, K Murakami… - Applied physics …, 2009 - iopscience.iop.org
Abstract Semipolar (11 bar 2 2) GaN was achieved by controlling anisotropic growth rates in
a maskless r-plane patterned sapphire substrate. Upon optimizing the growth conditions, the …
a maskless r-plane patterned sapphire substrate. Upon optimizing the growth conditions, the …
High optical polarization ratio from semipolar (202 1) blue-green InGaN/GaN light-emitting diodes
High optical polarization ratio from semipolar (2021) blue-green InGaN/GaN light-emitting
diodes | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text …
diodes | Applied Physics Letters | AIP Publishing Skip to Main Content Umbrella Alt Text …
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
Photoelectrochemical (PEC) band gap selective undercut etching is discussed as an
alternative technique to chemical-mechanical polishing and laser-lift off for substrate …
alternative technique to chemical-mechanical polishing and laser-lift off for substrate …
Structural, electronic, and optical properties of -plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory
In this paper we present a detailed analysis of the structural, electronic, and optical
properties of an m-plane (In, Ga) N/GaN quantum well structure grown by metal organic …
properties of an m-plane (In, Ga) N/GaN quantum well structure grown by metal organic …
Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
SE Brinkley, YD Lin, A Chakraborty, N Pfaff… - Applied Physics …, 2011 - pubs.aip.org
The polarization of spontaneous emission was investigated for various indium compositions
and quantum wells on m-plane oriented gallium nitride (GaN) light emitting diodes (LEDs) …
and quantum wells on m-plane oriented gallium nitride (GaN) light emitting diodes (LEDs) …
Anisotropic emission wavelength distribution of semipolar InGaN quantum wells on symmetric convex lens-shaped GaN microstructures
Y Matsuda, A Sakaki, M Funato, Y Kawakami - Applied Physics Letters, 2023 - pubs.aip.org
We fabricated InGaN quantum wells (QWs) on convex lens-shaped GaN microstructures
formed on semipolar ( 1 1 2 2) GaN substrates. Despite the centrosymmetric lens-like …
formed on semipolar ( 1 1 2 2) GaN substrates. Despite the centrosymmetric lens-like …