The excellent properties of III–V semiconductors make them intriguing candidates for next-
generation electronics and optoelectronics. Their nanowire (NW) counterparts further …

Here we demonstrate a more effective use of III–V photoconversion material to achieve an
ultrahigh power-per-weight ratio from a solar cell utilizing an axial pin junction GaAs/AlGaAs …

Controlled doping of GaAs nanowires is crucial for the development of nanowire-based
electronic and optoelectronic devices. Here, we present a noncontact method based on time …

Semiconductor nanowires (NWs) are a candidate technology for future optoelectronic
devices. One of the critical issues in NWs is the control of impurity doping for the formation of …

We report the first study on doping assessment in Te-doped GaAsSb nanowires (NWs) with
variation in Gallium Telluride (GaTe) cell temperature, using X-ray photoelectron …

The development of non-planar structures such as arrays of nanowires (NWs), poses a
significant challenge for dopant concentration determination. Techniques that can be readily …

The incorporation of Si into vapor–liquid–solid GaAs nanowires often leads to p-type doping,
whereas it is routinely used as an n-dopant of planar layers. This property limits the …

A new dopant incorporation mechanism in Ga-assisted GaAs nanowires grown by molecular
beam epitaxy is reported. Off-axis electron holography revealed that p-type Be dopants …

We report the growth of vertical, high-quality GaAs0. 9Sb0. 1 nanowires (NWs) with
improved density on oxygen (O2) plasma-treated monolayer graphene/SiO2/p-Si (111) by …

Controlled and reproducible doping is essential for nanowires (NWs) to realize their
functions. However, for the widely used self-catalyzed vapor–liquid–solid (VLS) growth …