A Perspective View of Silicon Based Classical to Non-Classical MOS Transistors and their Extension in Machine Learning
Unprecedented growth in CMOS technology and demand of high-density integrated circuits
(ICs) in semiconductor industry has motivated to research community towards the …
(ICs) in semiconductor industry has motivated to research community towards the …
Unveiling the self-heating and process variation reliability of a junctionless FinFET-based hydrogen gas sensor
Field-effect-transistor-based sensors are essential for environmental monitoring, industrial
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …
An analytical drain current modelling of DMGC CGAA FET: a circuit level implementation
PK Mudidhe, BR Nistala - Physica Scripta, 2023 - iopscience.iop.org
The GAA FET has emerged as a promising device due to its excellent control over short-
channel effects and improved electrostatic control. This manuscript presents the analytical …
channel effects and improved electrostatic control. This manuscript presents the analytical …
Investigation on dependency of thermal characteristics on gate/drain bias voltages in stacked nanosheet transistors
In this paper, the gate/drain voltage-dependent self-heating effect (SHE) in gate-all-around
(GAA) nanosheet field effect transistors (NSFETs) and FinFETs is investigated by 3-D TCAD …
(GAA) nanosheet field effect transistors (NSFETs) and FinFETs is investigated by 3-D TCAD …
Revealing the Reliability Performance of a Dielectric Modulated Negative Capacitance Junctionless FinFET Biosensor
In this study, we proposed a dielectric modulated (DM) Negative Capacitance Junctionless
FinFET (JLNC-FinFET) to achieve precise label-free electrical detection of biomolecules …
FinFET (JLNC-FinFET) to achieve precise label-free electrical detection of biomolecules …
Impact of bottom dielectric isolation of Si-stacked nanosheet transistor on stress and self-heating at 3-Nm node and beyond
M Saleh, AM Bayoumi… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
This study examines the effect of leakage current reduction techniques on the performance
of the nanosheet FETs (NS-FETs) at 3 nm and beyond. We study the effects of the …
of the nanosheet FETs (NS-FETs) at 3 nm and beyond. We study the effects of the …
Self-Heating Effect in a MoS2 Field-Effect Transistor and Improved Heat Dissipation by the BN Capping Layer
The inefficient heat dissipation in two-dimensional (2D) semiconductor-based field-effect
transistors (FETs) hampers their electrical performance and reliability. In this study, we …
transistors (FETs) hampers their electrical performance and reliability. In this study, we …
Gate oxide induced reliability assessment of junctionless FinFET-based hydrogen gas sensor
Gate oxide plays a crucial role in the performance of nano-scaled emerging devices. In FET-
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
based sensors, gate-oxide-induced reliability analysis is essential for credible sensing. In …
Impact of Device-to-Device Thermal Interference Due to Self-Heating on the Performance of Stacked Nanosheet FETs
M Balasubbareddy, K Sivasankaran - IEEE Access, 2024 - ieeexplore.ieee.org
The stacked nanosheet field effect transistor (SNSHFET) exhibits superior electrostatic
performance with its increased effective channel width. However, as the technology node …
performance with its increased effective channel width. However, as the technology node …
Systematic performance benchmarking of nanosheet and FinFET: An intrinsic self-heating perspective
The device miniaturization and engineered structures of non-planar transistors with gate
wrapping and channel stacking raise severe reliability concerns. One of the major issues in …
wrapping and channel stacking raise severe reliability concerns. One of the major issues in …