Transition-metal dichalcogenides (TMDs) in flexible technology can offer large-area
scalability and high-density integration with a low power consumption. However …

Two-dimensional (2D) materials are favorable candidates for resistive memories in high-
density nanoelectronics owing to their ultrathin scaling and controllable interfacial …

This study demonstrates the efficacy of an emerging p‐type copper iodide (CuI)
semiconductor in a flexible, low‐voltage resistive random‐access memory (RRAM), which …

Two-dimensional (2D) layered materials have recently gained significant attention and have
been extensively studied for their potential applications in neuromorphic computing, where …

The development of energy-efficient, high-performance broadband photodetectors utilizing
cost-effective amorphous metal oxide semiconductors has great potential for next …

This study presents a novel photodiode technology with augmented optoelectronic
capabilities through the incorporation of quantum dots (QDs). The photodiode, composed of …

Polyoxometalate (POM)-based materials are ideal candidates for implementing molecular
memories, and rational POM molecule design is key to higher resistive switching (RS) …

Copper iodide (CuI) has garnered considerable attention as a promising alternative to p‐
type transparent conducting oxides owing to its low cation vacancy formation energy …

Memristors are recognized as crucial devices for future nonvolatile memory and artificial
intelligence. Due to their typical neuron-synapse-like metal–insulator–metal (MIM) sandwich …

The present spotlight article addresses the challenges associated with metal oxide dielectric
thin films deposited from liquid-phase precursors, which are often deemed inferior in thin film …