A sustainable computing scenario demands more energy-efficient processors.
Neuromorphic systems mimic biological functions by employing spiking neural networks for …

This paper proposes a new test approach that goes beyond cell-aware test, ie, device-aware
test. The approach consists of three steps: defect modeling, fault modeling, and test/DfT …

Resistive RAM (RRAM) is a promising technology to replace traditional technologies such
as Flash, because of its low energy consumption, CMOS compatibility, and high density …

STT-MRAM mass production is around the corner as major foundries worldwide invest
heavily on its commercialization. To ensure high-quality STT-MRAM products, effective yet …

As we move toward the commercialization of Spin-Transfer Torque Magnetic Random
Access Memories (STT-MRAM), cost-effective testing and in-field reliability have become …

The STT-MRAM manufacturing process involves not only traditional CMOS process steps,
but also the integration of magnetic tunnel junction (MTJ) devices, the data-storing elements …

Resistive RAM (RRAM) is one of the emerging non-volatile memories that may not only
replace DRAM and/or Flash in the future, but also enable new computing paradigms such as …

Today's computing architectures and device technologies are incapable of meeting the
increasingly stringent demands on energy and performance posed by evolving applications …

Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM), as one of the most
promising emerging memory technology for on-chip memory, offers many advantageous …

As one of the most promising emerging non-volatile memory (NVM) technologies, spin-
transfer torque magnetic random access memory (STT-MRAM) has attracted significant …