Amorphous silicon is a semiconductor with a lower density than the metallic silicon liquid. It
is widely believed that the amorphous–liquid transition is a first-order melting transition. In …

A theory is developed that explains the genesis of the strikingly regular hexagonal arrays of
nanodots that can form when the flat surface of a binary compound is subjected to normal …

Heavy-ion irradiation of crystalline germanium (c-Ge) results in the formation of a
homogeneous amorphous germanium (a-Ge) layer at the surface. This a-Ge layer …

Amorphous silicon micropillars show anisotropic plastic shape changes upon irradiation
with 30 MeV Cu ions. The transverse plastic strain rate is (2.5±0.2)× 10− 17 cm 2/ion at 77 K …

Modification on Si (111) surface resulting from 200 MeV Ag 107+ 14 ion irradiation at an
incidence angle of 15° with respect to the surface normal has been investigated by atomic …

Pure and gold-doped amorphous silicon membranes were irradiated with swift heavy ions
(75 MeV Ag or 1.1 GeV Au ions) and studied using small-angle x-ray scattering. The …

Surface modifications caused by a swift heavy ion irradiation on a crystalline p-type silicon
crystal have been reported.∼ 100 MeV Si7+ ions from a 15UD Pelletron source has been …

The elastic response of monolayer silicon-germanium alloys (Si 1-x Ge x, 0≤ x≤ 1) is
investigated using first-principles calculations. It is found that the atomic arrangement of …

Swift heavy-ion irradiation of amorphous materials causes nonsaturating plastic
deformation. Thin samples deform anisotropically as if they were hammered. Thick samples …

We have systematically studied the effect of swift heavy ion bombardment on surface
morphologies of nanocrystalline ferrite thin films using atomic force microscopy (AFM) …