Abstract AlGaN/GaN High Electron Mobility Transistor (HEMT) frequently employs field plate
techniques to improve the device's reliability and optimum performance. This literature …

The impact of aluminium nitride (AlN) Spacer, Gallium Nitride (GaN) Cap Layer, Front Pi
Gate (FG) and Back Pi Gate (BG), Dual Floating material High K dielectric material such as …

This paper presents a TCAD based investigation of virtually fabricated Π-shaped Gate p-
GaN HEMT for reliable enhancement mode operation. A detailed comparison with the …

In this paper, the DC behavior of 6 nm gate length with Silicon (Si) and Silicon Dioxide
(SiO2) Heterojunction Electron Mobility Transistor with Double Decker Pi gate is analyzed …

This work presents an accurate, scalable, and efficient hybrid machine learning (ML) and
neural network (NN) model based, cross‐platform application to analyze and estimate …

Several different and-gate architectures of GaN/AlGaN high electron mobility transistor
(HEMT) are compared using full band cellular Monte Carlo (CMC) device simulator for …

In this paper, the impact of AlGaN barrier thickness () and substrate leakage on the noise
conductance and noise figure in GaN High Electron Mobility Transistor (HEMT) is …

A double π-gate engineering technique is proposed to analyse the device performance and
enhance the reliability by reducing the surface traps and buffer traps using Silvaco TCAD …

In this article, vertical CAVET with boron‐doped GaN layer as current blocking layer (CBL)
for AlGaN/GaN is proposed in this study, and different electrical characteristics of the …

In this study, the DC and RF performances of multi fingered AlGaN/GaN are studied in
simulation, and the DC and RF performance of the traditional T-gate HEMT and the multi …