Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …

Threshold voltage and drain current instabilities in state-of-the-art 4H-SiC MOSFETs with
thermal as-grown SiO 2 and NO-annealed gate oxides have been studied using fast IV …

Poor electron mobility at SiC/SiO 2 interfaces has long held up the development of SiC-
based power devices. The mobility degradation has been attributed to defects at the …

Time-dependent dielectric breakdown (TDDB) is one of the major issues concerning long-
range reliability of dielectric layers in SiC-based high-power devices. Despite the extensive …

We report investigations of Si face 4H-SiC MOSFETs with aluminum (Al) ion-implanted gate
channels. High-quality SiO/sub 2/-SiC interfaces are obtained both when the gate oxide is …

This work deals with the assessment of gate dielectric for 4H‐SiC MOSFETs using
technology based two‐dimensional numerical computer simulations. Results are studied for …

We report that annealing in low-oxygen-partial-pressure (low-p O2) ambient is effective in
reducing the interface state density (D IT) at a SiC (0001)/SiO 2 interface near the …

Ultrahigh channel mobility is demonstrated for 4 H-Si C metal-oxide-semiconductor field-
effect transistors (MOSFETs) with Al 2 O 3 gate insulators fabricated at low temperatures by …

We investigated methods of measuring the threshold voltage (V th) shift of 4H-silicon carbide
(SiC) metal–oxide–semiconductor field-effect transistors (MOSFETs) under positive DC …