Facts and myths of dielectric breakdown processes—Part I: Statistics, experimental, and physical acceleration models
EY Wu - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
In part I of this article, the current understanding and experimental observations of the so-
called first breakdown (BD) phenomena are reviewed and summarized with a focus on BD …
called first breakdown (BD) phenomena are reviewed and summarized with a focus on BD …
CuTi as Potential Liner-and Barrier-Free Interconnect Conductor
M Zhang, D Gall - IEEE Transactions on Electron Devices, 2024 - ieeexplore.ieee.org
CuTi layers are co-sputter deposited on 20-nm SiO2/Si (001) wafers at 350° C to quantify
their stability in direct contact with a dielectric and to explore the potential of CuTi as barrier …
their stability in direct contact with a dielectric and to explore the potential of CuTi as barrier …
Impact of Anode-side Defect Generation on Inter-Level TDDB Degradation in Cu/Low-k Damascene Structures
N Suzumura, K Omori, H Tsuchiya… - 2020 IEEE …, 2020 - ieeexplore.ieee.org
We investigated the inter-level time-dependent dielectric breakdown (VTDDB) degradation
mechanisms in Cu/low-k damascene structures. Considering the dependence of VTDDB …
mechanisms in Cu/low-k damascene structures. Considering the dependence of VTDDB …
A percolation defect nucleation and growth model for assessment of the impact of low-k dielectric breakdown on circuit reliability
SC Lee, AS Oates - 2017 IEEE International Reliability Physics …, 2017 - ieeexplore.ieee.org
We postulate that BEOL dielectric breakdown can be described by the nucleation and
subsequent growth of percolation defects. We develop a semi-empirical model to describe …
subsequent growth of percolation defects. We develop a semi-empirical model to describe …
Towards an appropriate acceleration model for BEOL TDDB
R Muralidhar, E Liniger, T Shaw, A Kim… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
TDDB lifetime projections at operating voltages for backend of line (BEOL) dielectrics have
been based on accelerated testing at high fields and extrapolation to operating conditions …
been based on accelerated testing at high fields and extrapolation to operating conditions …
Fast TDDB monitoring for BEOL interconnect dielectrics
C LaRow, Z Chbili, SF Yap, A Kerber… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
In this paper, we present a simple experimental setup to expand our fast TDDB methodology
[1] into a broad voltage range covering FEOL and BEOL TDDB testing. The new setup uses …
[1] into a broad voltage range covering FEOL and BEOL TDDB testing. The new setup uses …
Enhanced Phase-Driven -Learning-Based DRM for Multicore Processors
In this paper, we propose a new dynamic reliability management technique for multicore
processors using phase-driven Q-learning-based method. Our technique considers a wide …
processors using phase-driven Q-learning-based method. Our technique considers a wide …
Moisture-related ageing mechanisms of interconnects low-κ dielectrics
M Vidal-Dho - 2020 - theses.hal.science
Over the past decades, scaling of microelectronic chips, in particular transistors and memory
cells, has allowed to increase substantially both the density of integrated circuit and …
cells, has allowed to increase substantially both the density of integrated circuit and …
Time-dependent series resistance and implications for voltage acceleration models in BEOL TDDB
A Kim, B Li, P McLaughlin… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
A continuous down-scaling of BEOL pitch for advanced process technologies has drastically
increased the resistance of Cu interconnects, which brings up a concern of a series …
increased the resistance of Cu interconnects, which brings up a concern of a series …