Strain Engineering of Low‐Dimensional Materials for Emerging Quantum Phenomena and Functionalities
Recent discoveries of exotic physical phenomena, such as unconventional
superconductivity in magic‐angle twisted bilayer graphene, dissipationless Dirac fermions in …
superconductivity in magic‐angle twisted bilayer graphene, dissipationless Dirac fermions in …
Tuning the luminescence of phosphors: beyond conventional chemical method
Tuning the luminescence of phosphors is extremely important in controlling and processing
light for active components of light sources, optical sensing, display devices, and …
light for active components of light sources, optical sensing, display devices, and …
The role of halide oxidation in perovskite halide phase separation
Halide perovskites display full solid solubility for Br: I and Cl: Br compositions at equilibrium,
yet initially homogeneous distributions often partition into Br-and I-rich (Cl-and Br-) regions …
yet initially homogeneous distributions often partition into Br-and I-rich (Cl-and Br-) regions …
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2
We demonstrate the continuous and reversible tuning of the optical band gap of suspended
monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains …
monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains …
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS2 Sheet
Tuning band energies of semiconductors through strain engineering can significantly
enhance their electronic, photonic, and spintronic performances. Although low-dimensional …
enhance their electronic, photonic, and spintronic performances. Although low-dimensional …
High electron mobility in strained GaAs nanowires
Transistor concepts based on semiconductor nanowires promise high performance, lower
energy consumption and better integrability in various platforms in nanoscale dimensions …
energy consumption and better integrability in various platforms in nanoscale dimensions …
Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch
L Balaghi, G Bussone, R Grifone, R Hübner… - Nature …, 2019 - nature.com
The realisation of photonic devices for different energy ranges demands materials with
different bandgaps, sometimes even within the same device. The optimal solution in terms of …
different bandgaps, sometimes even within the same device. The optimal solution in terms of …
Atomic scale strain relaxation in axial semiconductor III–V nanowire heterostructures
Combination of mismatched materials in semiconductor nanowire heterostructures offers a
freedom of bandstructure engineering that is impossible in standard planar epitaxy …
freedom of bandstructure engineering that is impossible in standard planar epitaxy …
Inducing a direct-to-pseudodirect bandgap transition in wurtzite GaAs nanowires with uniaxial stress
G Signorello, E Lörtscher, PA Khomyakov… - Nature …, 2014 - nature.com
Many efficient light-emitting devices and photodetectors are based on semiconductors with,
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …
respectively, a direct or indirect bandgap configuration. The less known pseudodirect …
Strain-induced pseudoheterostructure nanowires confining carriers at room temperature with nanoscale-tunable band profiles
Semiconductor heterostructures play a vital role in photonics and electronics. They are
typically realized by growing layers of different materials, complicating fabrication and …
typically realized by growing layers of different materials, complicating fabrication and …