[HTML][HTML] The gate injection-based field-effect synapse transistor with linear conductance update for online training

S Seo, B Kim, D Kim, S Park, TR Kim, J Park… - Nature …, 2022 - nature.com
Neuromorphic computing, an alternative for von Neumann architecture, requires synapse
devices where the data can be stored and computed in the same place. The three-terminal …

Nanotube field electron emission: principles, development, and applications

Y Li, Y Sun, JTW Yeow - Nanotechnology, 2015 - iopscience.iop.org
There is a growing trend to apply field emission (FE) electron sources in vacuum electronic
devices due to their fast response, high efficiency and low energy consumption compared to …

Theoretical assessment of transitions across thermionic, field, and space-charge-limited emission

AM Darr, CR Darr, AL Garner - Physical Review Research, 2020 - APS
As electron emission devices continue to push technological limits of device size, electric
field, and temperature, characterization of device limitations due to thermionic (TE), field …

Resistive switching memory based on organic/inorganic hybrid perovskite materials

Y Liu, F Li, Z Chen, T Guo, C Wu, TW Kim - Vacuum, 2016 - Elsevier
In this work, a resistance switching memory based on organic/inorganic hybrid perovskites
(OIHPs) was fabricated. The CH 3 NH 3 PbI 3 perovskite was grown on polymethyl …

[HTML][HTML] Theory of photoemission from cathodes with disordered surfaces

P Saha, O Chubenko, J Kevin Nangoi, T Arias… - Journal of Applied …, 2023 - pubs.aip.org
Linear-accelerator-based applications like x-ray free electron lasers, ultrafast electron
diffraction, electron beam cooling, and energy recovery linacs use photoemission-based …

Work function extraction of indium tin oxide films from MOSFET devices

SD Nehate, A Prakash, PD Mani… - ECS Journal of Solid …, 2018 - iopscience.iop.org
Recent commercialization has increased the research interest in transparent conducting
oxides like indium tin oxide being implemented in display technologies and sensors. A wide …

Geometry-asymmetric photodetectors from metal–semiconductor–metal van der Waals heterostructures

X Fu, T Li, Q Li, C Hao, L Zhang, D Fu, J Wang… - Materials …, 2022 - pubs.rsc.org
The functional diversities of two-dimensional (2D) material devices with simple architectures
are ultimately limited by immature doping techniques. An alternative strategy is to use …

Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer

C Wu, F Li, T Guo - Applied Physics Letters, 2014 - pubs.aip.org
Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-
stacking layer were fabricated. By using the traditional transfer method, the chemical vapor …

Fabrication and electrical characterization of nickel/p-Si Schottky diode at low temperature

R Kumar, S Chand - Solid State Sciences, 2016 - Elsevier
In this study the current–voltage and capacitance–voltage characteristics of metal
semiconductor Ni/p-Si (100) based Schottky diode on p-type silicon measured over a wide …

Carrier transport and memory mechanisms of multilevel resistive memory devices with an intermediate state based on double-stacked organic/inorganic …

Z Ma, C Wu, DU Lee, F Li, TW Kim - Organic Electronics, 2016 - Elsevier
Multilevel resistive memory devices with an intermediate state were fabricated utilizing a
poly (methylmethacrylate)(PMMA) layer sandwiched between double-stacked PMMA layers …