[HTML][HTML] Substantially enhanced properties of 2D WS2 by high concentration of erbium doping against tungsten vacancy formation
H Zhao, G Zhang, B Yan, B Ning, C Wang, Y Zhao… - Research, 2022 - spj.science.org
Doping in 2D materials is an important method for tuning of band structures. For this
purpose, it is important to develop controllable doping techniques. Here, we demonstrate a …
purpose, it is important to develop controllable doping techniques. Here, we demonstrate a …
Engineering of Vacancy Defects in WS2 Monolayer by Rare‐Earth (Er, Tm, Lu) Doping: A First‐Principles Study
Y Zhao, B Yan, X Liang, S Liu, X Shi… - physica status solidi …, 2023 - Wiley Online Library
Vacancy defects in two‐dimensional (2D) materials are critical to their properties. The
substitutional doping in vacancy defects by rare‐earth atoms results in diverse material …
substitutional doping in vacancy defects by rare‐earth atoms results in diverse material …
High-sensitivity hybrid PbSe/ITZO thin film-based phototransistor detecting from 2100 to 2500 nm near-infrared illumination
We report that high absorption PbSe colloidal quantum dots (QDs) having a peak
absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) …
absorbance beyond 2100 nm were synthesized and incorporated into InSnZnO (ITZO) …