Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …

The unique material properties of GaN, wide bandgap, high thermal conductivity, high
breakdown voltage, high electron mobility and the device properties of GaN HEMT (High …

Substantial developments have been achieved in the synthesis of chemical vapour
deposition (CVD) diamond in recent years, providing engineers and designers with access …

With the increasing power density and reduced size of the GaN-based electronic power
converters, the heat dissipation in the devices becomes the key issue toward the real …

Polycrystalline diamond (PCD) was grown onto high-k dielectric passivated AlGaN/GaN-on-
Si high electron mobility transistor (HEMT) structures, with film thicknesses ranging from 155 …

GaN high electron mobility transistors (HEMTs) are well suited for high-frequency operation
due to their lower on resistance and device capacitance compared with traditional silicon …

A new approach to the fabrication of efficient heat sinks for GaN-based transistors is
demonstrated. A key feature of this work is the growth of polycrystalline diamond coating on …

The in-plane thermal conductivity of polycrystalline diamond near its nucleation site, which is
a key parameter to an efficient integration of diamond in modern high power AlGaN/GaN …

Record DC power has been demonstrated in AlGaN/GaN high electron mobility transistors
fabricated using a substrate replacement process in which a thick diamond substrate is …

In this paper, the type, activation energy (E a) and cross section (σ n) of the GaN buffer traps
existing in the AlGaN/GaN high-electron mobility transistors are investigated through low …