Study of surface morphology, impurity incorporation and defect generation during homoepitaxial growth of 4H-SiC using dichlorosilane
H Song, MVS Chandrashekhar… - ECS Journal of Solid …, 2014 - iopscience.iop.org
The growth of 4 off-axis 4H-SiC epilayers by chemical vapor deposition is studied using
dichlorosilane as the Si precursor in a chimney reactor. The unintentional and intentional …
dichlorosilane as the Si precursor in a chimney reactor. The unintentional and intentional …
The role of interface effects and minority carriers in the metal-semiconductor Schottky junction
SU Omar - 2014 - search.proquest.com
The metal-semiconductor (MS) Schottky barrier junction, formed by putting a metal in contact
with a semiconductor crystal, is the simplest form of electronic rectifier. Despite the simple …
with a semiconductor crystal, is the simplest form of electronic rectifier. Despite the simple …
Room temperature photoluminescence from 4H-SiC epilayers: Non-destructive estimation of in-grown stacking fault density
Room temperature photoluminescence was obtained by UV excitation of homoepitaxially
grown 4H-SiC thin films. A broad band emission from boron deep levels centered at 517nm …
grown 4H-SiC thin films. A broad band emission from boron deep levels centered at 517nm …