2D homojunctions for electronics and optoelectronics

F Wang, K Pei, Y Li, H Li, T Zhai - Advanced Materials, 2021 - Wiley Online Library
In the post‐Moore era, 2D materials with rich physical properties have attracted widespread
attention from the scientific and industrial communities. Among 2D materials, the 2D …

Doping and decorating 2D materials for biosensing: benefits and drawbacks

HL Chia, CC Mayorga‐Martinez… - Advanced Functional …, 2021 - Wiley Online Library
The rapid advancements in the field of materials science, especially nanoscience, have
played a critical role in the advancement of sensors, in particular the development of novel …

Fabrication of 1D Te/2D ReS2 Mixed-Dimensional van der Waals pn Heterojunction for High-Performance Phototransistor

JJ Tao, J Jiang, SN Zhao, Y Zhang, XX Li, X Fang… - ACS …, 2021 - ACS Publications
The superior optical and electronic properties of the two-dimensional (2D) rhenium disulfide
(ReS2) makes it suitable for nanoelectronic and optoelectronic applications. However, the …

P-type Doping in Large-Area Monolayer MoS2 by Chemical Vapor Deposition

M Li, J Yao, X Wu, S Zhang, B Xing, X Niu… - … applied materials & …, 2020 - ACS Publications
Molybdenum disulfide (MoS2) with excellent properties has been widely reported in recent
years. However, it is a great challenge to achieve p-type conductivity in MoS2 because of its …

1T' RexMo1−xS2–2H MoS2 Lateral Heterojunction for Enhanced Hydrogen Evolution Reaction Performance

HTT Nguyen, LA Adofo, SH Yang… - Advanced Functional …, 2023 - Wiley Online Library
The imperfect interfaces between 2D transition metal dichalcogenides (TMDs) are suitable
for boosting the hydrogen evolution reaction (HER) during water electrolysis. Here, the …

Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS2 Monolayers

Y Jin, Z Zeng, Z Xu, YC Lin, K Bi, G Shao… - Chemistry of …, 2019 - ACS Publications
Substitutional doping has been proven to be an effective route to engineer band gap,
transport characteristics, and magnetism in transition metal dichalcogenides. Herein, we …

Substitutionally Doped MoSe2 for High‐Performance Electronics and Optoelectronics

F Zhong, J Ye, T He, L Zhang, Z Wang, Q Li, B Han… - Small, 2021 - Wiley Online Library
Abstract 2D materials, of which the carrier type and concentration are easily tuned, show
tremendous superiority in electronic and optoelectronic applications. However, the …

Growth and interlayer engineering of 2D layered semiconductors for future electronics

C Song, G Noh, TS Kim, M Kang, H Song, A Ham… - ACS …, 2020 - ACS Publications
Layered materials that do not form a covalent bond in a vertical direction can be prepared in
a few atoms to one atom thickness without dangling bonds. This distinctive characteristic of …

Controllable p-type doping of monolayer MoS 2 with tantalum by one-step chemical vapor deposition

M Li, X Wu, W Guo, Y Liu, C Xiao, T Ou… - Journal of Materials …, 2022 - pubs.rsc.org
Molybdenum disulfide (MoS2) is natively an n-type semiconductor due to omnipresent
electron-donating sulfur vacancies, indicating that the synthesis of high-quality p-type …

Construction of pn junctions in single-unit-cell ZnIn2S4 nanosheet arrays toward promoted photoelectrochemical performance

Y Wu, S Yao, G Lv, Y Wang, H Zhang, P Liao… - Journal of Catalysis, 2021 - Elsevier
The realization of semiconductor p–n junctions is essential for improved
photoelectrochemical (PEC) performance in water splitting. Concerning the traditional pn …