Effect of La doping on dielectric constant and tetragonality of ZrO2 thin films deposited by atomic layer deposition
J Jeong, Y Han, H Sohn - Journal of Alloys and Compounds, 2022 - Elsevier
The electrical properties of La-doped ZrO 2 thin films were studied for an application to cell
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
capacitors in dynamic random-access memory. La-doped ZrO 2 thin films were deposited by …
Effect of Oxidation Temperature on Physical and Electrical Properties of Sm2O3 Thin-Film Gate Oxide on Si Substrate
Thermal oxidation of 150-nm sputtered pure samarium metal film on silicon substrate has
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
been carried out in oxygen ambient at various temperatures (600° C to 900° C) for 15 min …
Physical and electrical properties of thermal oxidized Sm2O3 gate oxide thin film on Si substrate: Influence of oxidation durations
Growth of 150 nm Sm 2 O 3 films by sputtered pure samarium metal film on silicon
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
substrates and followed by thermal oxidation process in oxygen ambient at 700° C through …
Effects of anodisation parameters on thin film properties: a review
YH Wong, MG Affendy, SK Lau, PC Teh… - Materials Science …, 2017 - Taylor & Francis
Electrochemical anodisation is a well-received method in the complementary metal-oxide-
semiconductor field as it is advantageous; best performed at room temperature which …
semiconductor field as it is advantageous; best performed at room temperature which …
Multilayer thin films of aluminum oxide and tantalum oxide deposited by pulsed direct current magnetron sputtering for dielectric applications
This research describes the synthesis of multilayer thin films of aluminum oxide and
tantalum oxide for dielectric applications. The multilayer thin films are made of two, four, or …
tantalum oxide for dielectric applications. The multilayer thin films are made of two, four, or …
Microstructural and optical properties of ZrON/Si thin films
ZrON/Si (100) layer structure formation has been produced by oxidation/nitridation of
sputtered Zr metal in N2O/Ar ambient at 500–900° C. Micromorphology and structural …
sputtered Zr metal in N2O/Ar ambient at 500–900° C. Micromorphology and structural …
Development and optimisation of a SiO 2 PVD technique based on the thermal decomposition of PDMS
This work reports the development of a novel and facile physical vapour deposition (PVD)
system for SiO2 deposition with a wide and controllable range of final film thicknesses. An …
system for SiO2 deposition with a wide and controllable range of final film thicknesses. An …
Physical and dispersive optical characteristics of ZrON/Si thin-film system
To date, the complex evaluation of physical and dispersive optical characteristics of the
ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si …
ZrON/Si film system has yet been reported. Hence, ZrON thin films have been formed on Si …
Trap-assisted tunneling, capacitance–voltage characteristics, and surface properties of Sm2O3 thin film on Si substrate
The morphology, topography, and electrical properties of sputtered pure samarium metal
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
film on silicon substrates which thermal oxidized in oxygen ambient at various temperatures …
Au nanoparticles embedded at the interface of Al/4H-SiC Schottky contacts for current density enhancement
Nanostructured contacts, comprised of nanoparticles (NPs) embedded at the interface of
contact/semiconductor, offer a viable solution in modification of Schottky barrier height (SBH) …
contact/semiconductor, offer a viable solution in modification of Schottky barrier height (SBH) …