Ferroelectric field-effect transistors based on HfO2: a review
In this article, we review the recent progress of ferroelectric field-effect transistors (FeFETs)
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
based on ferroelectric hafnium oxide (HfO 2), ten years after the first report on such a device …
Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles
We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high …
Defects in ferroelectric HfO 2
A Chouprik, D Negrov, EY Tsymbal, A Zenkevich - Nanoscale, 2021 - pubs.rsc.org
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing
K Toprasertpong, K Tahara, T Fukui… - IEEE Electron …, 2020 - ieeexplore.ieee.org
Crystallization annealing is a key process for the formation of the ferroelectric phase in HfO 2-
based ferroelectric thin films. In this study, we systematically investigate the notable tradeoff …
based ferroelectric thin films. In this study, we systematically investigate the notable tradeoff …
Memory window in ferroelectric field-effect transistors: Analytical approach
K Toprasertpong, M Takenaka… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
A memory window (MW) of ferroelectric field-effect transistors (FeFETs), defined as a
separation of the HIGH-state and the LOW-state threshold voltages, is an important measure …
separation of the HIGH-state and the LOW-state threshold voltages, is an important measure …
Reconfigurable Physical Reservoir in GaN/α-In2Se3 HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer
Significant effort for demonstrating a gallium nitride (GaN)-based ferroelectric metal–oxide–
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
semiconductor (MOS)-high-electron-mobility transistor (HEMT) for reconfigurable operation …
Wakeup-free and endurance-robust ferroelectric field-effect transistor memory using high pressure annealing
Wakeup-free and endurance-robust HfZrO 2 (HZO) ferroelectric field-effect transistor
(FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas …
(FeFET) was fabricated on a silicon-on-insulator substrate. After a high-pressure forming gas …
Reliability of HfO2-Based Ferroelectric FETs: A Critical Review of Current and Future Challenges
Ferroelectric transistors (FeFETs) based on doped hafnium oxide (HfO2) have received
much attention due to their technological potential in terms of scalability, high-speed, and …
much attention due to their technological potential in terms of scalability, high-speed, and …
Dielectric-engineered high-speed, low-power, highly reliable charge trap flash-based synaptic device for neuromorphic computing beyond inference
The coming of the big-data era brought a need for power-efficient computing that cannot be
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …
realized in the Von Neumann architecture. Neuromorphic computing which is motivated by …