Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …

Room-temperature photoluminescence (PL) measurements are performed on GaInN/GaN
multiple-quantum-well heterostructures grown on GaN-on-sapphire templates with different …

We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R=
A n+ B n 2+ C n 3+ f (n)⁠, where f (n) represents carrier leakage out of the active region. The …

Efficiency droop in InGaN light-emitting diodes (LEDs) is analyzed based on the rate
equation model. By using the peak point of the efficiency versus current-density relation as …

We thoroughly explored the physical origin of the efficiency decrease with increasing
injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep …

All-inorganic perovskite quantum dots (QDs) have been considered as outstanding
candidates for high-performance optoelectronic device applications. However, the chemical …

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV)
light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer …

The emission efficiency droop and internal quantum efficiency (IQE) in AlGaN epilayers and
heterostructures were investigated by studying photoluminescence intensity dependence on …

We have experimentally investigated the radiative and nonradiative recombination in a
GaN/AlGaN multiple-quantum-well laser diode. The each carrier lifetime has been evaluated …

Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-
LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of …