Manipulating the valley degree of freedom besides the charge and spin has attracted
increasing interest in fundamental sciences and emerging applications. In this study, the …

Two-dimensional ferrovalley materials should simultaneously possess three characteristics,
that is, a Curie temperature beyond atmospheric temperature, perpendicular magnetic …

The coexistence of an intrinsic ferrovalley (FV) and nontrivial band topology attracts
intensive interest, both for its fundamental physics and for its potential applications, namely a …

It is crucial to manipulate the valley degree of freedom for the valleytronics and spintronics
development, which offers fascinating opportunities in both practical applications and …

Using first-principles calculations, we report the electronic properties with a special focus on
the band splitting in the WSi2N4 class of materials. Due to the broken inversion symmetry …

Two-dimensional (2D) valleytronic materials, exhibiting valley-contrasting physics, are both
fundamentally intriguing and practically appealing to be used in nanoscale devices. In this …

Ferrovalley materials can achieve manipulation of the valley degree of freedom with intrinsic
spontaneous valley polarization introduced by their intrinsic ferromagnetism. A good …

Combining the nontrivial band topology with the intrinsic ferrovalley (FV), the valley-
nonequilibrium quantum anomalous Hall effect (VQAHE) attracts growing attention both for …

Electronic correlation may have an essential influence on the electronic structure in some
materials with special structures and localized orbital distribution. In this work, taking a …

Superior to ferromagnetic (FM) materials, antiferromagnetic (AFM) materials do not have any
net magnetic moment and are robust to external magnetic perturbation with ultrahigh …