Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels
L Ardaravičius, O Kiprijanovič, J Liberis… - Semiconductor …, 2015 - iopscience.iop.org
Experimental investigation of electron transport along a two-dimensional channel confined
in an InGaN alloy of Al ${} _ {0.82} $ In ${} _ {0.18} $ N/AlN/In ${} _ {0.1} $ Ga ${} _ {0.9} …
in an InGaN alloy of Al ${} _ {0.82} $ In ${} _ {0.18} $ N/AlN/In ${} _ {0.1} $ Ga ${} _ {0.9} …
Energy relaxation of hot electrons by LO phonon emission in AlGaN/AlN/GaN heterostructure with in situ Si3N4 passivation
In this study, energy relaxation mechanisms of electrons in AlGaN/AlN/GaN High Electron
Mobility Transistor (HEMT) structures with and without in situ Si 3 N 4 passivation were …
Mobility Transistor (HEMT) structures with and without in situ Si 3 N 4 passivation were …
[PDF][PDF] Hot Electron Transport in Two-dimensional SiGe/Si Quantum Wells
K Suresha - academia.edu
The hot carrier energy loss rate in a two-dimensioal electron gas in SiGe/Si quantum well
has been theoretically studied and carrier concentration ranging from 1.0 x1012 to 5.0 …
has been theoretically studied and carrier concentration ranging from 1.0 x1012 to 5.0 …
Power Loss Mechanisms in Indium-Rich InGaN Samples
Molecular beam epitaxy-grown In x Ga 1− x N/GaN samples with indium fraction x ranging
between 0.44 and 0.784 were studied by pulsed current–voltage (I–V) measurements at 1.7 …
between 0.44 and 0.784 were studied by pulsed current–voltage (I–V) measurements at 1.7 …
Determination of Electron Temperature in DA-pHEMT Heterostructures by Shubnikov–de Haas Oscillation Method
DY Protasov, AK Bakarov, AI Toropov… - Russian Physics …, 2018 - Springer
The electron temperature of a two-dimensional electron gas heated by an electric field in DA-
pHEMT heterostructures was determined by the Shubnikov–de Haas (SdH) oscillation …
pHEMT heterostructures was determined by the Shubnikov–de Haas (SdH) oscillation …