Deep-ultraviolet integrated photonic and optoelectronic devices: A prospect of the hybridization of group III–nitrides, III–oxides, and two-dimensional materials
Progress in the design and fabrication of ultraviolet and deep-ultraviolet group III–nitride
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
optoelectronic devices, based on aluminum gallium nitride and boron nitride and their …
Observation of positive trions in α-MoO 3/MoS 2 van der Waals heterostructures
Mono-layer transition metal dichalcogenides (TMDCs) have emerged as an ideal platform
for the study of many-body physics. As a result of their low dimensionality, these materials …
for the study of many-body physics. As a result of their low dimensionality, these materials …
Effect of low-energy ion-beam irradiation on the structure and electron transport of monolayer MoS2
Y Zhao, Y Ishiguro, K Takai - Nuclear Instruments and Methods in Physics …, 2023 - Elsevier
The presence of vacancies in two-dimensional (2D) materials, such as monolayer MoS 2 (1L-
MoS 2), significantly affects their structural and electronic properties. In this study, 1L-MoS 2 …
MoS 2), significantly affects their structural and electronic properties. In this study, 1L-MoS 2 …
Enhanced Emission from Defect Levels in Multilayer MoS2
Realizing stimulated emission from defects in 2D‐layered semiconductors has the potential
to enhance the sensitivity of characterizing their defects. However, stimulated emission from …
to enhance the sensitivity of characterizing their defects. However, stimulated emission from …
[HTML][HTML] Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy
Group-III nitride nano-dimensional materials with noncentrosymmetric crystal structure offer
an exciting area of piezotronics for energy conversion applications. We experimentally …
an exciting area of piezotronics for energy conversion applications. We experimentally …
Temperature-tuned band gap properties of MoS2 thin films
MoS 2 is one of the fascinating members of transition metal dichalcogenides and has
attracted great attention due to its various optoelectronic device applications and its …
attracted great attention due to its various optoelectronic device applications and its …
Luminescence Properties of Epitaxial Cu2O Thin Films Electrodeposited on Metallic Substrates and Cu2O Single Crystals
L Trinkler, D Dai, L Chang, MMC Chou, TY Wu… - Materials, 2023 - mdpi.com
The luminescent properties of epitaxial Cu2O thin films were studied in 10–300 K
temperature range and compared with the luminescent properties of Cu2O single crystals …
temperature range and compared with the luminescent properties of Cu2O single crystals …
Charge density wave activated excitons in TiSe2–MoSe2 heterostructures
Layered materials enable the assembly of a new class of heterostructures where lattice-
matching is no longer a requirement. Interfaces in these heterostructures therefore become …
matching is no longer a requirement. Interfaces in these heterostructures therefore become …
[HTML][HTML] Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes
We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-
photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting …
photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting …
Boron carbonitride nanosheet/ZnO nanorod heterojunctions for white-light emission
We report for first time the fabrication of boron carbonitride (B x C y N z) nanosheets with a
unique structural backbone comprised of B-doped graphitic carbon nitride (g-C3N4) as well …
unique structural backbone comprised of B-doped graphitic carbon nitride (g-C3N4) as well …