III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
[PDF][PDF] Semipolar gallium nitride on silicon: Technology and properties.
VN Bessolov, EV Konenkova, SA Kukushkin… - Reviews on Advanced …, 2014 - ipme.ru
This review represents the last achievements in synthesis of epitaxial layers of gallium
nitride (GaN) on silicon (Si) substrate. The basic physical, crystallography and physical …
nitride (GaN) on silicon (Si) substrate. The basic physical, crystallography and physical …
High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy
The dependence of electron mobility on growth conditions and threading dislocation density
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
(TDD) was studied for n−-GaN layers grown by ammonia-based molecular beam epitaxy …
Growth and characterization of GaN-based LED wafers on La 0.3 Sr 1.7 AlTaO 6 substrates
W Wang, H Yang, G Li - Journal of Materials Chemistry C, 2013 - pubs.rsc.org
High-quality GaN-based light emitting diode (LED) wafers on La0. 3Sr1. 7AlTaO6
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …
(LSAT)(111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the …
Materials challenges of AlGaN-based UV optoelectronic devices
MH Crawford - Semiconductors and Semimetals, 2017 - Elsevier
Over the past 15 years, tremendous progress has been made in AlGaN-based
optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes (LDs) in the …
optoelectronic devices, including light-emitting diodes (LEDs) and laser diodes (LDs) in the …
Semipolar (2021) GaN and InGaN light-emitting diodes grown on sapphire
We have demonstrated growing uniform and purely nitrogen polar semipolar (202̅1̅) GaN
epilayers on 2 in. patterned sapphire substrates. The as-grown surface of (202̅1̅) GaN is …
epilayers on 2 in. patterned sapphire substrates. The as-grown surface of (202̅1̅) GaN is …
Engineering of AlGaN-Delta-GaN quantum-well gain media for mid-and deep-ultraviolet lasers
The gain characteristics of AlGaN-delta-GaN quantum wells (QWs) with varying delta-GaN
positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta …
positions and AlGaN QW compositions are analyzed. The use of optimized AlGaN-delta …
Compositionally graded InGaN layers grown on vicinal N-face GaN substrates by plasma-assisted molecular beam epitaxy
This work reports on compositionally graded (0 0 0 1¯) N-polar In x Ga 1− x N layers. The
InGaN grades with different final In compositions xf up to 0.25 were grown by plasma …
InGaN grades with different final In compositions xf up to 0.25 were grown by plasma …
AlGaN-based vertical injection laser diodes using inverse tapered p-waveguide for efficient hole transport
An AlGaN deep ultraviolet laser diode design exploiting AlN substrates is presented,
featuring an inverse-tapered p-waveguide layer. The 2-D optoelectronic simulation predicts …
featuring an inverse-tapered p-waveguide layer. The 2-D optoelectronic simulation predicts …