Analytical characterisation of 3D nano scale ultra-thin film surrounding gate MOSFET

A Agarwal, RL Sharma, P Mani - International Journal of …, 2022 - inderscienceonline.com
This research focuses on characterisation and development of a drain current model for a
3D nanoscale surrounding gate metal oxide semiconductor field-effect transistor (SG …

Modeling and Analysis of High RF Behavior of Nano Scale Surrounding Gate MOSFET

A Agarwal, RL Sharma, P Mani - NeuroQuantology, 2022 - search.proquest.com
This paper presents novel modeling of nano-scale Surrounding Gate MOSFET operating in
sub-threshold region. The current is obtained using surface potential and varying device …

An Investigation on Drain Current of Junction and Junctionless Surrounding Gate MOSFET

A Agarwal, RL Sharma, P Mani - Micro-Electronics and …, 2020 - Springer
This paper presents investigation about the drain current parameters of Surrounding Gate
MOSFET (SG MOSFET) with junction and junctionless transistor. The junctionless SG …

[引用][C] Simulation and performance analysis of electrical properties of nano scale surrounding gate MOSFET

A Agarwal, RL Sharma, P Mani - Annals of the Romanian Society for Cell Biology, 2021