We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

This article is a review of recent progress in our understanding of the optical properties of the
important polytypes of SiC: 3C, 4H, 6H, and 15R. We focus on experimental work but also …

Raman spectroscopy has been used to investigate wafers of both 4H–SiC and 6H–SiC. The
wafers studied were semi-insulating and n-type (nitrogen) doped with concentrations …

A reactor concept for the growth of high‐quality epitaxial SiC films has been investigated.
The reactor concept is based on a hot‐wall type susceptor which, due to the unique design …

Radiation damage induced in SiC single crystal by neutrons and sequentially neutrons+
91.3 MeV Xe ions irradiations were characterised by optical measurements (absorption and …

The negatively charged silicon vacancy (V Si−) in silicon carbide (SiC) is a paramagnetic
and optically active defect in hexagonal SiC. The V Si− defect possesses S= 3/2 spin with …

An overview of the status of SiC technology for power devices is discussed. 4H-SiC is the
most desirable SiC polytype for power devices because of its superior electron transport …

We discuss continuing materials technology improvements that have transformed silicon
carbide from an intriguing laboratory material into a premier manufacturable semiconductor …

Due to its intriguingly electrical, thermal and optical characteristics, single-crystal silicon
carbide (SiC), one of the most significant wide-bandgap semiconductors, has been receiving …

Homoepitaxial growth has been performed on Si-face nominally on-axis 4H–SiC substrates
using horizontal Hot-wall chemical vapor deposition system. Special attention was paid to …