Dead time compensation for high-flux ranging
Dead time effects have been considered a major limitation for fast data acquisition in various
time-correlated single photon counting applications, since a commonly adopted approach …
time-correlated single photon counting applications, since a commonly adopted approach …
Noise characteristics improvement of submicron InP/InGaAs avalanche photodiode for laser detection system
S MohammadNejad, F Aghaei - Optics Communications, 2020 - Elsevier
InP/InGaAs avalanche photodiodes have attracted much attention in optoelectronics and
long distance optical communication systems due to their high bit rate and gain-bandwidth …
long distance optical communication systems due to their high bit rate and gain-bandwidth …
Artificial spiking neuron based on a single-photon avalanche diode and a microcavity laser
VN Chizhevsky, VA Kulchitsky, SY Kilin - Applied Physics Letters, 2021 - pubs.aip.org
We present an experimental realization and characterization of artificial spiking neuron
based on an optoelectronic pair “microcavity laser-single photon avalanche diode” …
based on an optoelectronic pair “microcavity laser-single photon avalanche diode” …
The role of detection times in reflectivity estimation with single-photon lidar
In direct time-of-flight single-photon lidar, the photon detection times are typically used to
estimate the depth, while the number of detections is used to estimate the reflectivity. This …
estimate the depth, while the number of detections is used to estimate the reflectivity. This …
An analytical solution for McIntyre's model of avalanche triggering probability for SPAD compact modeling and performance exploration
TC De Albuquerque, D Issartel, S Gao… - Semiconductor …, 2021 - iopscience.iop.org
Single photon avalanche diodes (SPADs) are widely used to monitor fast and weak optical
signals. The modeling of two main figures of merit of SPAD, namely the dark count rate …
signals. The modeling of two main figures of merit of SPAD, namely the dark count rate …
Determination of Optical Properties of MOVPE-Grown InxGa1-xAs/InP Epitaxial Structures by Spectroscopic Ellipsometry
InxGa1− xAs epitaxial layers with different AsH3 flows have been grown on InP substrate
with the MOVPE system. It has been found that AsH3 flow variation affects the In …
with the MOVPE system. It has been found that AsH3 flow variation affects the In …
On-chip copper–dielectric interference filters for manufacturing of ambient light and proximity CMOS sensors
L Frey, L Masarotto, P Gros D'Aillon, C Pellé… - Applied Optics, 2014 - opg.optica.org
Filter technologies implemented on CMOS image sensors for spectrally selective
applications often use a combination of on-chip organic resists and an external substrate …
applications often use a combination of on-chip organic resists and an external substrate …
Application of quantum light in holography
D Abramović - 2023 - dr.nsk.hr
Holography is a powerful imaging technique that allows to record both amplitude and phase
information over a broad electromagnetic spectrum in a hologram. Classical holography as …
information over a broad electromagnetic spectrum in a hologram. Classical holography as …
A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
M Demir, S Elagöz - Cumhuriyet Science Journal, 2024 - csj.cumhuriyet.edu.tr
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP
substrate, a critical area in the development of high-performance III-V semiconductor …
substrate, a critical area in the development of high-performance III-V semiconductor …