Stability and reliability of lateral GaN power field-effect transistors
JA Del Alamo, ES Lee - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
GaN electronics constitutes a revolutionary technology with power handling capabilities that
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
amply exceed those of Si and other semiconductors in many applications. RF, microwave …
A technology overview of the powerchip development program
M Araghchini, J Chen, V Doan-Nguyen… - … on Power Electronics, 2013 - ieeexplore.ieee.org
The PowerChip research program is developing technologies to radically improve the size,
integration, and performance of power electronics operating at up to grid-scale voltages (eg …
integration, and performance of power electronics operating at up to grid-scale voltages (eg …
Reliability of hybrid-drain-embedded gate injection transistor
K Tanaka, T Morita, M Ishida, T Hatsuda… - 2017 IEEE …, 2017 - ieeexplore.ieee.org
Reliability tests on 600V-rated GaN-based normally-off hybrid-drain-embedded Gate
Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT …
Injection Transistor (HD-GIT) are performed. High-temperature reverse-bias test on HD-GIT …
Reliability analysis of permanent degradations on AlGaN/GaN HEMTs
In this paper, we review and add additional data and understandings on our findings on the
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …
two most common failure modes of GaN-based HEMTs: 1) permanent gate leakage current …
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
Coupled electro-thermo-mechanical simulation and Raman thermometry were utilized to
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …
analyze the evolution of mechanical stress in AlGaN/GaN high electron mobility transistors …
Reliability studies of AlGaN/GaN high electron mobility transistors
DJ Cheney, EA Douglas, L Liu, CF Lo… - Semiconductor …, 2013 - iopscience.iop.org
AlGaN/GaN high electron mobility transistors are gaining commercial acceptance for use in
high power and high frequency applications, but the degradation mechanisms that drive …
high power and high frequency applications, but the degradation mechanisms that drive …
Degradation mechanisms for GaN and GaAs high speed transistors
We present a review of reliability issues in AlGaN/GaN and AlGaAs/GaAs high electron
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …
mobility transistors (HEMTs) as well as Heterojunction Bipolar Transistors (HBTs) in the …
Gate dielectric reliability and instability in GaN metal-insulator-semiconductor high-electron-mobility transistors for power electronics
JA del Alamo, A Guo, S Warnock - Journal of Materials Research, 2017 - cambridge.org
GaN field-effect transistors with impressive power switching characteristics have been
demonstrated. Preventing their widespread field deployment are reliability and instability …
demonstrated. Preventing their widespread field deployment are reliability and instability …
Thermal and Electrical Stability Assessment of AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistors (MOS-HEMTs) With HfO2 Gate Dielectric
AlGaN/GaN high-electron mobility transistors (HEMTs) and metal-oxide-semiconductor
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
(MOS)-HEMTs using HfO 2 as a gate dielectric have been analyzed at room temperature …
Progressive breakdown in high-voltage GaN MIS-HEMTs
S Warnock, JA del Alamo - 2016 IEEE International Reliability …, 2016 - ieeexplore.ieee.org
We have investigated the time-dependent dielectric breakdown (TDDB) characteristics of
high-voltage AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors …
high-voltage AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors …