In this paper, we measured the experimental amplitude and phase of the Photothermal
deflection signal for bulk GaAs “silicon” doped n+ type,“chromium” doped n type and …

In this paper, we developed a theoretical model for the photothermal deflection technique in
order to investigate the electronic parameters of three-layer semiconductor structures. This …

Photo-thermal deflection technique is used to study the nonradiative recombination process
in laser structures Ga 0.7 In 0.3 As 0.23 Sb 0.77 and Al 0.7 Ga 0.3 As 0.08 Sb 0.92 grown by …

Photothermal deflection technique (PTD) is used to investigate the effects of thermal
annealing time on nonradiative recombination parameters ie nonradiative lifetime of minority …

In this work, in a first step we studied the effect of dispersed TBPO-capped CdSe
nanoparticles in poly (3-hexylthiophene) matrix on the sub-bandgap absorption spectra …

Owing to its important role as an active layer for Vertical Cavity Surface Emitting laser
(VCSEL). We studied the transport properties in annealed GaInAsSb/GaSb by means of PTD …

In this paper, we investigate the effect of thermal annealing on nonradiative recombination
parameters of GaAsPN materials used for intermediate band solar cells. This study is …

Sn 2 Sb 2 S 5 materials were synthesized by thermal evaporation using earth-abundant tin,
antimony and sulfur elements. The effect of annealing temperature on structural …

Photo-thermal deflection technique PTD is used to study the nonradiative recombination
process in BGaAs/GaAs alloy with boron composition of 3% and 8% grown by metal organic …

Laser damage identification is one of the hot research issues in recent years. Based on the
mechanism of photothermal deflection, this paper established a physical model of reflective …