An overview of Au & photonic crystal fiber of sensors

HS Ali, MA Fakhri - Materials Science Forum, 2020 - Trans Tech Publ
In this paper, a focus is placed on the recent applications and trends of the uses of optical
and photonic sensors with applications in environmental monitoring and health and …

Deposition geometry effect on structural, morphological and optical properties of Nb2O5 nanostructure prepared by hydrothermal technique

ET Salim, RA Ismail, HT Halbos - Applied Physics A, 2020 - Springer
This work aims to explain the effect of substrate position and deposition angle on the
structural, optical, and morphological properties of niobium pentoxide (Nb 2 O 5) thin films …

Preparation and characterization of UV-enhanced GaN/porous Si photodetector using PLA in liquid

MA Fakhri, AA Alwahib, ET Salim, RA Ismail… - Silicon, 2023 - Springer
The photoluminescence and optoelectronics properties are very important for gallium nitride
(GaN) nanoparticles in the applications of ultraviolet and blue optoelectronic devices. In this …

Effect of silicon substrate type on Nb2O5/Si device performance: an answer depends on physical analysis

ET Salim, JA Saimon, MK Abood, MA Fakhri - Optical and Quantum …, 2020 - Springer
This work presents the deposition of Nb 2 O 5 on p and n type silicon substrate. Nb 2 O 5
thin film was deposited using precipitation method for solution preparation, and employing …

Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique

MA Fakhri, HD Jabbar, MJ AbdulRazzaq, ET Salim… - Scientific Reports, 2023 - nature.com
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate
via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy …

Some critical issues on the structural properties of Nb2O5 nanostructure film deposited by hydrothermal technique

H Asady, ET Salim, RA Ismail - AIP Conference Proceedings, 2020 - pubs.aip.org
In preparing Nb2O5 thin films under hydrothermal conditions, deposition time among the key
factors that influence the crystallinity of Nb2O5 nanostructures. The effect of deposition time …

Optical and electrical investigations of tungsten trioxide for optoelectronics devices

ET Salim, AI Hassan, F A. Mohamed, MA Fakhri… - Journal of Materials …, 2023 - Springer
This study aimed to investigate the properties of WO3 thin films deposited on glass and
silicon substrates using the thermal spray technique. The films were prepared with a WO3 …

An investigation on GaN/porous-Si NO2 gas sensor fabricated by pulsed laser ablation in liquid

HAAA Amir, MA Fakhri, AA Alwahib, ET Salim… - Sensors and Actuators B …, 2022 - Elsevier
Pulsed-laser ablation in liquid was used to prepare GaN nanostructure. The P-type GaN
nanostructure was deposited onto the porous-silicon substrate through the drop-casting …

Effect of gate dielectric thicknesses on MOS photodiode performance and electrical properties

ET Salim, AI Hassan, SA Naaes - Materials Research Express, 2019 - iopscience.iop.org
Different film thickness was used to investigate the effect of the Al 2 O 3 as a dielectric
material for the fabrication of Al/AL 2 O 3/Si/Al MOS diode. Chemical spray pyrolysis method …

Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition

MA Fakhri, HD Jabbar, MJ AbdulRazzaq, ET Salim… - Scientific Reports, 2023 - nature.com
In this study, the fabrication of nanostructured GaN/porous Si by pulsed laser deposition
(PLD) was demonstrated. The porous silicon was prepared using laser-assisted …