Quantum‐Engineered Devices Based on 2D Materials for Next‐Generation Information Processing and Storage
A Pal, S Zhang, T Chavan, K Agashiwala… - Advanced …, 2023 - Wiley Online Library
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …
Emerging reconfigurable electronic devices based on two‐dimensional materials: A review
As the dimensions of the transistor, the key element of silicon technology, are approaching
their physical limits, developing semiconductor technology with novel concepts and …
their physical limits, developing semiconductor technology with novel concepts and …
Achieving highly efficient pH-universal hydrogen evolution by Mott-Schottky heterojunction of Co2P/Co4N
M Qin, L Chen, H Zhang, M Humayun, Y Fu… - Chemical Engineering …, 2023 - Elsevier
A vital step towards sustainable hydrogen production is to develop high-efficiency
electrocatalysts for pH-universal hydrogen evolution reaction (HER). Modulation of the …
electrocatalysts for pH-universal hydrogen evolution reaction (HER). Modulation of the …
[HTML][HTML] Electronic properties of 2D materials and their junctions
With an extensive range of distinctive features at nano meter-scale thicknesses, two-
dimensional (2D) materials drawn the attention of the scientific community. Despite …
dimensional (2D) materials drawn the attention of the scientific community. Despite …
Recent progress in 1D contacts for 2D‐material‐based devices
Recent studies have intensively examined 2D materials (2DMs) as promising materials for
use in future quantum devices due to their atomic thinness. However, a major limitation …
use in future quantum devices due to their atomic thinness. However, a major limitation …
Dipole-Engineering Strategy for Regulating the Electronic Contact of a Two-Dimensional X/Graphene (X = , , ) van der Waals Interface
A Schottky barrier, formed in the contact of a two-dimensional (2D) semiconductor and metal
electrode, seriously degrades device performance. Herein, we propose a dipole …
electrode, seriously degrades device performance. Herein, we propose a dipole …
Contact resistance and interfacial engineering: Advances in high-performance 2D-TMD based devices
The development of advanced electronic devices is contingent upon sustainable material
development and pioneering research breakthroughs. Traditional semiconductor-based …
development and pioneering research breakthroughs. Traditional semiconductor-based …
Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi 2 N 4 heterostructures
X He, WZ Li, Z Gao, ZH Zhang, Y He - Journal of Materials Chemistry C, 2023 - pubs.rsc.org
The quality of contact between a metal electrode and a two-dimensional (2D) semiconductor
is simultaneously determined by the Schottky barrier height (SBH), the tunneling probability …
is simultaneously determined by the Schottky barrier height (SBH), the tunneling probability …
Ohmic behavior in metal contacts to n/p-type transition-metal dichalcogenides: Schottky versus tunneling barrier trade-off
High contact resistance (RC) between 3D metallic conductors and single-layer 2D
semiconductors poses major challenges toward their integration in nanoscale electronic …
semiconductors poses major challenges toward their integration in nanoscale electronic …
2D Materials‐Based Static Random‐Access Memory
Abstract 2D transition‐metal dichalcogenide semiconductors, such as MoS2 and WSe2, with
adequate bandgaps are promising channel materials for ultrascaled logic transistors. This …
adequate bandgaps are promising channel materials for ultrascaled logic transistors. This …