Epitaxial growth and characteristics of nonpolar a-plane InGaN films with blue-green-red emission and entire In content range
Nonpolar (11 20) plane In𝑥Ga1− 𝑥N epilayers comprising the entire In content (𝑥) range
were successfully grown on nanoscale GaN islands by metal-organic chemical vapor …
were successfully grown on nanoscale GaN islands by metal-organic chemical vapor …
Improved surface morphology and crystalline quality of semi-polar (112‾ 2) AlN epilayer with dual moderate-temperature-grown AlN interlayers
X Luo, X Zhang, B Chen, Y Shen, Y Tian, A Fan… - Materials Science in …, 2022 - Elsevier
Abstract Semi-polar (11 2‾ 2) AlN epilayers have been grown on (10 1‾ 0) m-plane sapphire
substrates with the help of dual moderate-temperature-grown (MTG) AlN interlayers by metal …
substrates with the help of dual moderate-temperature-grown (MTG) AlN interlayers by metal …
Effects of Buffer Layer on Structural Properties of Nonpolar (11 2¯ 0)-Plane GaN Film
Nonpolar (11 2¯ 0) a-plane GaN films were grown on semipolar (1 1¯ 02) r-plane sapphire
substrates using various buffer layers within a low-pressure metal organic chemical vapor …
substrates using various buffer layers within a low-pressure metal organic chemical vapor …
Impacts of specific element-treated three-dimensional GaN layer on characteristics of nonpolar a-plane GaN film
Y Xu, X Zhang, R Fang, X Luo, L Chen, S Xu… - Journal of Vacuum …, 2023 - pubs.aip.org
Nonpolar a-plane GaN films with three-dimensional (3D) GaN layers have successfully
grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The …
grown on r-plane sapphire substrates by metal organic chemical vapor deposition. The …
Effects of growth temperature for in-situ deposited SiNx interlayer on structural and optical properties of semipolar (112¯ 2) AlGaN films
X Luo, X Zhang, Y Qian, R Fang, B Chen, Y Shen… - Applied Surface …, 2023 - Elsevier
The dependence of surface morphology, crystalline quality, and optical properties on the
growth temperature of in-situ deposited SiN x interlayers in the semipolar (11 2¯ 2) AlGaN …
growth temperature of in-situ deposited SiN x interlayers in the semipolar (11 2¯ 2) AlGaN …
Improved characteristics of (11 2‾ 2) plane AlGaN films grown on SiNx interlayer
Q Dai, X Zhang, L Zhang, Z Qi, P Chen… - Materials Science in …, 2024 - Elsevier
SiN x interlayer was introduced in the epitaxial process of (11 2‾ 2) AlGaN film, and the
influences of SiN x on the properties of (11 2‾ 2) AlGaN were characterized. It was revealed …
influences of SiN x on the properties of (11 2‾ 2) AlGaN were characterized. It was revealed …
Enhanced structural and optical properties of semipolar (11 2¯ 2) AlGaN film with insertion of AlN/AlGaN superlattice
X Luo, X Zhang, R Fang, L Chen, S Xu, J Cui… - Journal of Vacuum …, 2023 - pubs.aip.org
The high-quality semipolar ( 11 2 2) AlGaN films with high Al contents were successfully
deposited on ( 10 1 0) m-plane sapphire substrates with the insertion of AlN/AlGaN …
deposited on ( 10 1 0) m-plane sapphire substrates with the insertion of AlN/AlGaN …
Effects of Dual Moderate-Temperature-Grown AIN Interlayers on Structural and Optical Properties of Semipolar (1122) AIN Film
XG Luo, X Zhang, RT Fang, J Cui… - Materials Science Forum, 2023 - Trans Tech Publ
High quality semipolar (1122) AlN films have been grown on (1010) m-plane sapphire
substrates with the help of dual moderate-temperature-grown (MTG) AlN interlayers by using …
substrates with the help of dual moderate-temperature-grown (MTG) AlN interlayers by using …