[图书][B] Modeling and simulation for microelectronic packaging assembly: manufacturing, reliability and testing
S Liu, Y Liu - 2011 - books.google.com
Although there is increasing need for modeling and simulation in the IC package design
phase, most assembly processes and various reliability tests are still based on the time …
phase, most assembly processes and various reliability tests are still based on the time …
Effect of growth base pressure on the thermoelectric properties of indium antimonide nanowires
We report a study of the effect of the growth base pressure on the thermoelectric (TE)
properties of indium antimonide (InSb) nanowires (NWs) synthesized using a vapour–liquid …
properties of indium antimonide (InSb) nanowires (NWs) synthesized using a vapour–liquid …
GaN nanowires: CVD synthesis and properties
XM Cai, AB Djurišić, MH Xie - Thin Solid Films, 2006 - Elsevier
The growth of GaN nanowires from Ga and NH3 sources in the flow of Ar carrier gas using a
chemical vapor deposition (CVD) system was systematically studied. The substrates used …
chemical vapor deposition (CVD) system was systematically studied. The substrates used …
High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation
Nanowires (NWs) of GaN thin films were prepared on as-grown Si (111) and porous silicon
(PS) substrates using thermal evaporation method. The film growth produced high-quality …
(PS) substrates using thermal evaporation method. The film growth produced high-quality …
Synthesis of GaN nanowires through Ga2O3 films' reaction with ammonia
Y Ai, C Xue, C Sun, L Sun, H Zhuang, F Wang, H Li… - Materials Letters, 2007 - Elsevier
GaN nanowires were synthesized by ammoniating Ga2O3 films on Ti layers deposited on Si
(111) substrates at 950° C. The products were characterized by X-ray diffraction (XRD) …
(111) substrates at 950° C. The products were characterized by X-ray diffraction (XRD) …
Density and morphology adjustments of gallium nitride nanowires
K Teker - Applied surface science, 2013 - Elsevier
This paper presents the morphology and density adjustments of GaN nanostructures via
CVD process. GaN nanostructure growth has been carried out using Ga and NH 3 as source …
CVD process. GaN nanostructure growth has been carried out using Ga and NH 3 as source …
Synthesis and photoluminescence of single-crystalline GaN nanowires and nanorods
BL Li, HZ Zhuang, CS Xue, SY Zhang - Journal of alloys and compounds, 2008 - Elsevier
Single-crystalline GaN nanowires and nanorods have been successfully grown on Si (111)
substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900° C in a …
substrates by magnetron sputtering through ammoniating the Ga2O3/Nb films at 900° C in a …
Synthesis of GaN nanorods through ammoniating Ga2O3/BN thin films deposited by RF magnetron sputtering
Y Wu, C Xue, H Zhuang, D Tian, J He, L Sun… - Journal of crystal …, 2006 - Elsevier
GaN nanorods were synthesized by ammoniating Ga2O3/BN films deposited on the Si (111)
substrate by radio frequency magnetron sputtering technique. X-ray diffraction, Fourier …
substrate by radio frequency magnetron sputtering technique. X-ray diffraction, Fourier …
Mg 掺杂GaN 纳米线的结构及其特性
薛成山， 张冬冬， 庄惠照， 黄英龙， 王邹平， 王英 - 物理化学学报, 2008 - whxb.pku.edu.cn
利用类似Delta 掺杂技术在硅衬底上沉积Mg: Ga2O3 薄膜, 然后在850℃ 下对薄膜进行氨化,
反应后制备出大量Mg 掺杂GaN 纳米线. 采用扫描电子显微镜(SEM), X 射线衍射(XRD) …
反应后制备出大量Mg 掺杂GaN 纳米线. 采用扫描电子显微镜(SEM), X 射线衍射(XRD) …
Fabrication and photoluminescence of GaN nanowires prepared by ammoniating Ga2O3/BN films on Si substrate
C Xue, Y Wu, H Zhuang, D Tian, Y Liu, J He, Y Ai… - Chinese Science …, 2006 - Springer
GaN nanowires were successfully prepared on Si (111) substrate through ammoniating Ga
2 O 3/BN films deposited by radio frequency magnetron sputtering system. The synthesized …
2 O 3/BN films deposited by radio frequency magnetron sputtering system. The synthesized …