Silicon and silicon germanium are the archetypical elemental and alloy semiconductor
materials for nanoelectronic, sensor, and photovoltaic applications. The investigation of …

The technological requirement to optimize materials for energy and electronic materials has
led to the use of defect engineering strategies. These strategies take advantage of the …

A study into the optimal deposition temperature for ultra-thin La 2 O 3/Ge and Y 2 O 3/Ge
gate stacks has been conducted in this paper with the aim to tailor the interfacial layer for …

In this study, we demonstrate the epitaxial growth of BaTiO 3 on Ge (001) by molecular
beam epitaxy using a thin Zintl template buffer layer. A combination of density functional …

In recent years germanium has been emerging as a mainstream material that could have
important applications in the microelectronics industry. The principle aim of this study is to …

In situ N 2/H 2/Ar radical pretreatment on p-type Ge (100) with HfO 2/La 2 O 3 high-κ gate
oxide was investigated by remote rf plasma on radical-assisted atomic layer deposition. The …

Density functional theory calculations were used to study the interaction between carbon
and isolated substitutional dopants (boron, gallium, aluminium, indium, silicon, tin, nitrogen …

At germanium/high-k interfaces cations and oxygen interstitials can diffuse into the
germanium substrate. Here we employ density functional theory calculations to investigate …

The GaAs MOS capacitors using ZrON as high-k gate dielectric with LaGeON or LaON as an
interfacial passivation layer (IPL) are fabricated and their electrical and interfacial properties …

The paper addresses the passivation of Germanium surfaces by using layered La2O3/ZrO2
high-k dielectrics deposited by Atomic Layer Deposition to be applied in Ge-based MOSFET …