Engineering tunneling selector to achieve high non-linearity for 1s1r integration

NK Upadhyay, T Blum, P Maksymovych… - Frontiers in …, 2021 - frontiersin.org
Memristor devices have been extensively studied as one of the most promising technologies
for next-generation non-volatile memory. However, for the memristor devices to have a real …

Modulating the Filamentary-Based Resistive Switching Properties of HfO2 Memristive Devices by Adding Al2O3 Layers

M Kalishettyhalli Mahadevaiah, E Perez, M Lisker… - Electronics, 2022 - mdpi.com
The resistive switching properties of HfO2 based 1T-1R memristive devices are electrically
modified by adding ultra-thin layers of Al2O3 into the memristive device. Three different …

Engineering Method for Tailoring Electrical Characteristics in TiN/TiO x /HfO x /Au Bi-Layer Oxide Memristive Devices

S Park, S Klett, T Ivanov, A Knauer, J Doell… - Frontiers in …, 2021 - frontiersin.org
Memristive devices have led to an increased interest in neuromorphic systems. However,
different device requirements are needed for the multitude of computation schemes used …