Abstract Gallium Nitride (GaN) belongs to III-N family of compound semiconductors, which
albeit new, is well-established material system in the fields of high power, high temperature …

In this paper, we focus on recent advances of the high-electron-mobility transistor (HEMT)-
based biosensors for the detection of various biomolecules. The vital utilization of …

This paper presents the applicability of a high-resolution AlGaN/AlN/GaN metal oxide
semiconductor-high electron mobility transistor (MOS-HEMT) for multiple bio detection and …

The paper presents a dielectrically modulated negative capacitance Germanium source
vertical tunnel FET (DM-NC-Ge-vTFET) biosensor for detection of non-tumorigenic breast …

In this work, GaN/AlN/AlGaN MOS-HEMT with a cavity below the gate towards the drain side
is studied for its sensitivity analysis and viability as a biosensor. The analysis is done by …

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-
free, real-time, and direct detection. Owing to their unique properties of two-dimensional …

This research article reports the electrical detection of breast-cancer biomarker (C-erbB-2) in
saliva/serum based on In1-xGaxAs/Si heterojunction dopingless tunnel FET (HJ-DL-TFET) …

Presented through this work is a steady state analytical model of the GaN HEMT based gas
detector. GaN with high chemical and thermal stability provides promises for detectors in …

Abstract A dielectric modulated MOS-HEMT is investigated for different neutral and charged
biomolecules with cavities embedded on the source side. To analyze the performance of the …

AlGaN/GaN high electron mobility transistors (HEMTs) demonstrate exceptional properties
desired for sensing regime applications due to their extraordinary chemical stability, non …