Electrically injected InAs∕ GaAs quantum dot spin laser operating at 200K
A spin-polarized vertical cavity surface emitting laser, with In As∕ Ga As self-organized
quantum dots as the active gain media, has been fabricated and characterized. Electron …
quantum dots as the active gain media, has been fabricated and characterized. Electron …
Carrier transport and recombination in p-doped and intrinsic 1.3 μm InAs∕ GaAs quantum-dot lasers
The radiative and nonradiative components of the threshold current in 1.3 μ m, p-doped
and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The …
and undoped quantum-dot semiconductor lasers were studied between 20 and 370 K. The …
Characterization and Modeling of Broad Spectrum InAs–GaAs Quantum-Dot Superluminescent Diodes Emitting at 1.2–1.3 m
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-mu m region
are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of~ 30 …
are demonstrated using InAs-GaAs quantum dots (QDs). The highest output powers of~ 30 …
Optical properties of InAs quantum dots/GaAs waveguides for ultra-fast scintillators
K Dropiewski, A Minns, M Yakimov, V Tokranov… - Journal of …, 2020 - Elsevier
Abstract InAs Quantum Dots (QDs) embedded in a GaAs matrix have unique scintillation
properties, valuable for high-energy physics and medical applications. Temperature …
properties, valuable for high-energy physics and medical applications. Temperature …
Effect of layer stacking and p-type doping on the performance of InAs∕ InP quantum-dash-in-a-well lasers emitting at 1.55 μm
G Moreau, S Azouigui, DY Cong, K Merghem… - Applied physics …, 2006 - pubs.aip.org
The authors report the growth of 6-, 9-, and 12-layer In As∕ In P quantum-dash-in-a-well
(DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser …
(DWELL) laser structures using gas source molecular beam epitaxy. Broad area laser …
Fermi's golden rule, nonequilibrium electron capture from the wetting layer, and the modulation response in P-doped quantum-dot lasers
DG Deppe, H Huang - IEEE journal of quantum electronics, 2006 - ieeexplore.ieee.org
Electron capture from a quantum dot's (QDs) wetting layer is described by Fermi's golden
rule that relates the transition rate to the density of final states. The wetting layer capture …
rule that relates the transition rate to the density of final states. The wetting layer capture …
Coupled InGaAs Quantum Dots for Electro-Optic Modulation
KY Chuang, TE Tzeng, TS Lay - Crystals, 2021 - mdpi.com
We investigated the growth of vertically coupled In0. 75Ga0. 25As quantum dots (QDs) by
varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and …
varying the GaAs spacer thickness (d). Vertically-aligned triple-layer QDs of uniform size and …
Optimisation of a-factor for quantum dot InAs/GaAs Fabry-Perot lasers emitting at 1.3 µm
DY Cong, A Martinez, K Merghem, G Moreau… - Electronics …, 2007 - search.proquest.com
Dynamic measurements of the Henry factor α^ sub H^ of InAs/GaAs Fabry-Pérot lasers are
compared for 3-, 5-and 10-QD layers. While α^ sub H^ dramatically increases with the bias …
compared for 3-, 5-and 10-QD layers. While α^ sub H^ dramatically increases with the bias …
Enhanced In (Ga) As∕ GaAs quantum dot based electro-optic modulation at 1.55 μm
G Moreau, A Martinez, DY Cong, K Merghem… - Applied Physics …, 2007 - pubs.aip.org
The authors report a study of the linear electro-optic coefficient in waveguides containing In
Ga As∕ Ga As quantum dots with a band gap at 1.3 μ m. The Pockels effect is investigated …
Ga As∕ Ga As quantum dots with a band gap at 1.3 μ m. The Pockels effect is investigated …
Temperature insensitive linewidth enhancement factor of p-type doped InAs∕ GaAs quantum-dot lasers emitting at 1.3 μm
The temperature dependence of microwave properties—relaxation frequency and Henry
factor—of undoped and p-type doped ten In As∕ Ga As quantum-dot layer lasers is reported …
factor—of undoped and p-type doped ten In As∕ Ga As quantum-dot layer lasers is reported …