Ni‐Based Ohmic Contacts to n‐Type 4H‐SiC: The Formation Mechanism and Thermal Stability
AV Kuchuk, P Borowicz, M Wzorek… - … in Condensed Matter …, 2016 - Wiley Online Library
The fabrication of low‐resistance and thermal stable ohmic contacts is important for
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
realization of reliable SiC devices. For the n‐type SiC, Ni‐based metallization is most …
60–700 K CTAT and PTAT temperature sensors with 4H-SiC Schottky diodes
A SiC Schottky dual-diode temperature-sensing element, suitable for both complementary
variation of VF with absolute temperature (CTAT) and differential proportional to absolute …
variation of VF with absolute temperature (CTAT) and differential proportional to absolute …
Comparison of nickel, cobalt, palladium, and tungsten Schottky contacts on n-4H-silicon carbide
VE Gora, A Chawanda, C Nyamhere, FD Auret… - Physica B: Condensed …, 2018 - Elsevier
We have investigated the current-voltage (IV) characteristics of nickel (Ni), cobalt (Co),
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
tungsten (W) and palladium (Pd) Schottky contacts on n-type 4 H-SiC in the 300–800 K …
[HTML][HTML] Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods
Z Zhou, W He, Z Zhang, J Sun, A Schöner… - Nanotechnology and …, 2021 - pubs.aip.org
Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation
mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and …
mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and …
The thermal stability study and improvement of 4H-SiC ohmic contact
S Liu, Z He, L Zheng, B Liu, F Zhang, L Dong… - Applied Physics …, 2014 - pubs.aip.org
The thermal stability of the standard Ni/SiC and a TiW/Ni/SiC Ohmic contacts was
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
investigated and compared after being aged at 400 C in the N 2 atmosphere. The Ohmic …
Raman study of Ni and Ni silicide contacts on 4H–and 6H–SiC
S Cichoň, P Macháč, B Barda, V Machovič, P Slepička - Thin Solid Films, 2012 - Elsevier
Ni2Si, NiSi and NiSi2 contacts were prepared on n-type 4H–and 6H–SiC (0001) by
deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature …
deposition of Ni and Si multilayers in the respective stoichiometry after high-temperature …
Low temperature, area-selective atomic layer deposition of NiO and Ni
Nickel and nickel oxide are utilized within various device heterostructures for chemical
sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible …
sensing, solar cells, batteries, etc. Recently, the rising interest in realizing low-cost, flexible …
A wafer-scale Ni-salicide contact technology on n-type 4H-SiC
H Elahipanah, A Asadollahi, M Ekström… - ECS Journal of Solid …, 2017 - iopscience.iop.org
A self-aligned Nickel (Ni) silicide process (Salicide) for n-type ohmic contacts on 4H-SiC is
demonstrated and electrically verified in a wafer-scale device process. The key point is to …
demonstrated and electrically verified in a wafer-scale device process. The key point is to …
Origin of ohmic behavior in Ni, Ni2Si and Pd contacts on n-type SiC
B Barda, P Macháč, S Cichoň, V Machovič… - Applied Surface …, 2010 - Elsevier
Ni, Ni2Si and Pd contacts were prepared on n-type 4H-SiC and annealed in the temperature
range of 750–1150° C. The annealed contacts were analyzed before and after acid etching …
range of 750–1150° C. The annealed contacts were analyzed before and after acid etching …
Low-resistance ohmic contacts to SiC nanowires and their applications to field-effect transistors
We report on the electrical characterization of two ohmic contacts (Ti/Au and Ni/Au) to
unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission …
unintentionally doped silicon carbide nanowires (SiCNWs) using the modified transmission …